Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > MMDF1N05ER2
MMDF1N05ER2

ON Semiconductor MMDF1N05ER2

Part Number:
MMDF1N05ER2
Manufacturer:
ON Semiconductor
Ventron No:
3585895-MMDF1N05ER2
Description:
MOSFET 2N-CH 50V 2A 8-SOIC
ECAD Model:
Datasheet:
MMDF1N05ER2

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor MMDF1N05ER2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMDF1N05ER2.
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 weeks ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    2W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    1A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MMDF1N05E
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    300m Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    12.5nC @ 10V
  • Rise Time
    30ns
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    2A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain-source On Resistance-Max
    0.3Ohm
  • Drain to Source Breakdown Voltage
    50V
  • Pulsed Drain Current-Max (IDM)
    10A
  • Avalanche Energy Rating (Eas)
    300 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MMDF1N05ER2 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDF1N05ER2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDF1N05ER2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDF1N05ER2 More Descriptions
Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8
MOSFETs- Power and Small Signal 50V 1A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2A; On-Resistance, Rds(on):300mohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to MMDF1N05ER2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    FET Technology
    FET Feature
    RoHS Status
    Lead Free
    Transistor Element Material
    Operating Temperature
    ECCN Code
    Terminal Position
    Current - Continuous Drain (Id) @ 25°C
    Polarity/Channel Type
    View Compare
  • MMDF1N05ER2
    MMDF1N05ER2
    ON Semiconductor
    OBSOLETE (Last Updated: 2 weeks ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    Cut Tape (CT)
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    Tin/Lead (Sn/Pb)
    150°C
    -55°C
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    50V
    2W
    GULL WING
    240
    not_compliant
    1A
    30
    MMDF1N05E
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    2 N-Channel (Dual)
    SWITCHING
    300m Ω @ 1.5A, 10V
    3V @ 250μA
    330pF @ 25V
    12.5nC @ 10V
    30ns
    25 ns
    40 ns
    2A
    20V
    2A
    0.3Ohm
    50V
    10A
    300 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
  • MMDF2N02ER2
    MMDF2N02ER2
    ON Semiconductor
    OBSOLETE (Last Updated: 2 weeks ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    Tape & Reel (TR)
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    25V
    2W
    GULL WING
    240
    not_compliant
    2A
    30
    -
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    2 N-Channel (Dual)
    SWITCHING
    100m Ω @ 2.2A, 10V
    3V @ 250μA
    532pF @ 16V
    30nC @ 10V
    17ns
    18 ns
    27 ns
    3.6A
    20V
    -
    0.1Ohm
    25V
    -
    245 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    SILICON
    -55°C~150°C TJ
    EAR99
    -
    -
    -
    MMDF1N05ER2 vs MMDF2N02ER2
  • MMDF2P02HDR2G
    MMDF2P02HDR2G
    ON Semiconductor
    OBSOLETE (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    Tin (Sn)
    -
    -
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -20V
    2W
    GULL WING
    260
    unknown
    -2A
    40
    MMDF2P02HD
    8
    Not Qualified
    2
    -
    ENHANCEMENT MODE
    2W
    2 P-Channel (Dual)
    SWITCHING
    160m Ω @ 2A, 10V
    2V @ 250μA
    588pF @ 16V
    20nC @ 10V
    66ns
    37 ns
    25 ns
    3.3A
    20V
    -
    0.16Ohm
    -20V
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    RoHS Compliant
    Lead Free
    SILICON
    -55°C~150°C TJ
    EAR99
    -
    -
    -
    MMDF1N05ER2 vs MMDF2P02HDR2G
  • MMDF2C03HDR2
    MMDF2C03HDR2
    ON Semiconductor
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    Tape & Reel (TR)
    2006
    e0
    -
    Obsolete
    1 (Unlimited)
    8
    Tin/Lead (Sn/Pb)
    -
    -
    -
    Other Transistors
    30V
    2W
    GULL WING
    240
    not_compliant
    4.1A
    30
    MMDF2C03HD
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    N and P-Channel
    SWITCHING
    70m Ω @ 3A, 10V
    3V @ 250μA
    630pF @ 24V
    16nC @ 10V
    18ns
    194 ns
    81 ns
    3A
    20V
    -
    0.07Ohm
    30V
    21A
    324 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    SILICON
    -55°C~150°C TJ
    -
    DUAL
    4.1A 3A
    N-CHANNEL AND P-CHANNEL
    MMDF1N05ER2 vs MMDF2C03HDR2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for MMDF1N05ER2
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.