ON Semiconductor MMBF5457LT1G
- Part Number:
- MMBF5457LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2497865-MMBF5457LT1G
- Description:
- JFET N-CH 25V 0.225W SOT23
- Datasheet:
- MMBF5457LT1G
ON Semiconductor MMBF5457LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF5457LT1G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating5mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMBF5457
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation200mW
- FET TypeN-Channel
- Transistor ApplicationAMPLIFIER
- Input Capacitance (Ciss) (Max) @ Vds7pF @ 15V
- Continuous Drain Current (ID)5mA
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage25V
- FET TechnologyJUNCTION
- Current - Drain (Idss) @ Vds (Vgs=0)1mA @ 15V
- Voltage - Cutoff (VGS off) @ Id500mV @ 10nA
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBF5457LT1G Description
MMBF5457LT1G JFET is easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).
MMBF5457LT1G Features
N-channel JFET High input impedance Voltage-controlled device Low noise
MMBF5457LT1G Applications
Amplifiers Switch circuits
MMBF5457LT1G JFET is easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).
MMBF5457LT1G Features
N-channel JFET High input impedance Voltage-controlled device Low noise
MMBF5457LT1G Applications
Amplifiers Switch circuits
MMBF5457LT1G More Descriptions
Trans JFET N-CH 25V 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
TRANSISTOR, JFET, N, 25V, SOT-23; Transistor Type:JFET; Transistor Polarity:N Channel; Voltage, V(br)gss:25V; Current, Idss Min:1mA; Current, Idss Max:5mA; Voltage, Vgs Off Max:6V; Case Style:SOT-23; Termination Type:SMD; Max ;RoHS Compliant: Yes
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
TRANSISTOR, JFET, N, 25V, SOT-23; Transistor Type:JFET; Transistor Polarity:N Channel; Voltage, V(br)gss:25V; Current, Idss Min:1mA; Current, Idss Max:5mA; Voltage, Vgs Off Max:6V; Case Style:SOT-23; Termination Type:SMD; Max ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MMBF5457LT1G.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyCurrent - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdRoHS StatusLead FreeSurface MountHTS CodeOperating Temperature (Max)Drain to Source Voltage (Vdss)Polarity/Channel TypeDrain-source On Resistance-MaxInput CapacitanceFeedback Cap-Max (Crss)Supplier Device PackagePower - MaxVoltage - Breakdown (V(BR)GSS)View Compare
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MMBF5457LT1GLAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors25V225mWDUALGULL WING260unknown5mA40MBF54573Not Qualified1SingleDEPLETION MODE200mWN-ChannelAMPLIFIER7pF @ 15V5mA25V25VJUNCTION1mA @ 15V500mV @ 10nARoHS CompliantLead Free------------
-
LAST SHIPMENTS (Last Updated: 3 days ago)--SOT-23-33SILICON-Cut Tape (CT)2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors30V225mWDUALGULL WING240not_compliant50mA30-3Not Qualified1SingleDEPLETION MODE--SWITCHING--30V30VJUNCTION--Non-RoHS CompliantContains LeadYES8541.21.00.95150°C30VN-CHANNEL60Ohm14pF----
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LAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors25V225mWDUALGULL WING260-5mA40MBF54843Not Qualified1SingleDEPLETION MODE200mWN-ChannelAMPLIFIER5pF @ 15V-25V-JUNCTION1mA @ 15V300mV @ 10nARoHS CompliantLead Free---25V---1 pF---
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--Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2008--Obsolete1 (Unlimited)-------------------N-Channel------4mA @ 20V2V @ 10nA----------SOT-23-3350mW40V
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