ON Semiconductor MMBF5457LT1
- Part Number:
- MMBF5457LT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2495926-MMBF5457LT1
- Description:
- JFET N-CH 25V 0.225W SOT23
- Datasheet:
- MMBF5457LT1
ON Semiconductor MMBF5457LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF5457LT1.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Package / CaseSOT-23-3
- Number of Pins3
- PackagingCut Tape (CT)
- Published2005
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating10mA
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation200mW
- Transistor ApplicationAMPLIFIER
- Drain to Source Voltage (Vdss)25V
- Polarity/Channel TypeN-CHANNEL
- Continuous Drain Current (ID)5mA
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage25V
- Input Capacitance7pF
- FET TechnologyJUNCTION
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
Description
The MMBF5457LT1 is an N?Channel General Purpose Transistor. A transistor is a semiconductor device that is used to amplify or switch electrical impulses. The transistor is a fundamental component of modern electronics. It is typically made of semiconductor material and has at least three terminals for connecting to an electronic circuit.
Features
? Characteristic Total Device Dissipation FR- = 25°C ? Gate Source Cutoff Voltage (VDS = 15 Vdc, = 10 nAdc) ? Gate Source Voltage (VDS = 15 Vdc, = 100 mAdc) ? Preferred devices are recommended choices for future use and best overall value ? Pb?Free Package is Available
Applications
? As a switch ? As an amplifier ? Mobile phones to televisions ? Sound reproduction ? Radio transmission ? Signal processing
The MMBF5457LT1 is an N?Channel General Purpose Transistor. A transistor is a semiconductor device that is used to amplify or switch electrical impulses. The transistor is a fundamental component of modern electronics. It is typically made of semiconductor material and has at least three terminals for connecting to an electronic circuit.
Features
? Characteristic Total Device Dissipation FR- = 25°C ? Gate Source Cutoff Voltage (VDS = 15 Vdc, = 10 nAdc) ? Gate Source Voltage (VDS = 15 Vdc, = 100 mAdc) ? Preferred devices are recommended choices for future use and best overall value ? Pb?Free Package is Available
Applications
? As a switch ? As an amplifier ? Mobile phones to televisions ? Sound reproduction ? Radio transmission ? Signal processing
MMBF5457LT1 More Descriptions
Trans JFET N-CH 25V 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
JFETs 25V 10mA No-Cancel/No-Return
Product Description Demo for Development.
French Electronic Distributor since 1988
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
JFETs 25V 10mA No-Cancel/No-Return
Product Description Demo for Development.
French Electronic Distributor since 1988
The three parts on the right have similar specifications to MMBF5457LT1.
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ImagePart NumberManufacturerLifecycle StatusMountPackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceFET TechnologyRoHS StatusLead FreeMounting TypeTransistor Element MaterialOperating TemperatureBase Part NumberFET TypeInput Capacitance (Ciss) (Max) @ VdsFeedback Cap-Max (Crss)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdSupplier Device PackagePower - MaxVoltage - Breakdown (V(BR)GSS)View Compare
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MMBF5457LT1LAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSOT-23-33Cut Tape (CT)2005e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°COther Transistors25V225mWDUALGULL WING240not_compliant10mA303Not Qualified1SingleDEPLETION MODE200mWAMPLIFIER25VN-CHANNEL5mA25V25V7pFJUNCTIONNon-RoHS CompliantContains Lead-------------
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LAST SHIPMENTS (Last Updated: 1 week ago)Surface MountTO-236-3, SC-59, SOT-23-33Tape & Reel (TR)2006e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)--Other Transistors25V225mWDUALGULL WING260-5mA403Not Qualified1SingleDEPLETION MODE200mWAMPLIFIER25V--25V--JUNCTIONRoHS CompliantLead FreeSurface MountSILICON-55°C~150°C TJMBF5484N-Channel5pF @ 15V1 pF1mA @ 15V300mV @ 10nA---
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LAST SHIPMENTS (Last Updated: 1 week ago)Surface MountTO-236-3, SC-59, SOT-23-33Tape & Reel (TR)2005e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)--Other Transistors25V225mWDUALGULL WING260unknown5mA403Not Qualified1SingleDEPLETION MODE200mWAMPLIFIER--5mA25V25V-JUNCTIONRoHS CompliantLead FreeSurface MountSILICON-55°C~150°C TJMBF5457N-Channel7pF @ 15V-1mA @ 15V500mV @ 10nA---
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--TO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2008--Obsolete1 (Unlimited)------------------------------Surface Mount--55°C~150°C TJ-N-Channel--4mA @ 20V2V @ 10nASOT-23-3350mW40V
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