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MJE181

ON Semiconductor MJE181

Part Number:
MJE181
Manufacturer:
ON Semiconductor
Ventron No:
2466858-MJE181
Description:
TRANS NPN 60V 3A TO225AA
ECAD Model:
Datasheet:
MJE181

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Specifications
ON Semiconductor MJE181 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE181.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 week ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    12.5W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MJE181
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.5W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    1.7V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.7V @ 600mA, 3A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    1.7V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    50
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJE181 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.The collector emitter saturation voltage is 1.7V, which allows for maximum design flexibility.When VCE saturation is 1.7V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 50MHz.A maximum collector current of 3A volts can be achieved.

MJE181 Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz


MJE181 Applications
There are a lot of ON Semiconductor
MJE181 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE181 More Descriptions
3.0 A, 60 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 60V 3A 3-Pin TO-225 Box
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation, Pd:1.5W; DC Current Gain Min (hfe):12; C-E Breakdown Voltage:60V; Collector Current:3A; DC Current Gain Max (hfe):250; Leaded Process Compatible:No RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to MJE181.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Surface Mount
    Series
    Case Connection
    JEDEC-95 Code
    Additional Feature
    Terminal Position
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Frequency
    View Compare
  • MJE181
    MJE181
    ON Semiconductor
    OBSOLETE (Last Updated: 1 week ago)
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    SILICON
    -65°C~150°C TJ
    Bulk
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.75
    Other Transistors
    60V
    12.5W
    240
    not_compliant
    3A
    30
    MJE181
    3
    Not Qualified
    1
    Single
    1.5W
    SWITCHING
    50MHz
    NPN
    NPN
    1.7V
    3A
    50 @ 100mA 1V
    100nA ICBO
    1.7V @ 600mA, 3A
    60V
    50MHz
    1.7V
    80V
    7V
    50
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE13007
    MJE13007
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 day ago)
    -
    Through Hole
    TO-220-3
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2009
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    -
    Other Transistors
    400V
    80W
    240
    not_compliant
    8A
    30
    -
    3
    Not Qualified
    1
    Single
    80W
    SWITCHING
    14MHz
    NPN
    NPN
    3V
    8A
    5 @ 5A 5V
    100μA
    3V @ 2A, 8A
    400V
    14MHz
    1V
    700V
    9V
    8
    Non-RoHS Compliant
    Contains Lead
    NO
    SWITCHMODE™
    COLLECTOR
    TO-220AB
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJE181 vs MJE13007
  • MJE18002
    MJE18002
    ON Semiconductor
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    -
    e0
    no
    Obsolete
    3 (168 Hours)
    3
    -
    TIN LEAD
    -
    -
    -
    -
    240
    -
    -
    30
    -
    3
    COMMERCIAL
    1
    -
    -
    SWITCHING
    -
    NPN
    NPN
    -
    -
    14 @ 200mA 5V
    100μA
    500mV @ 200mA, 1A
    -
    13MHz
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SWITCHMODE™
    COLLECTOR
    TO-220AB
    LEADFORM OPTIONS ARE AVAILABLE
    SINGLE
    R-PSFM-T3
    SINGLE
    50W
    450V
    2A
    13MHz
    -
    MJE181 vs MJE18002
  • MJE15034
    MJE15034
    ON Semiconductor
    OBSOLETE (Last Updated: 2 weeks ago)
    -
    Through Hole
    TO-220-3
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2004
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    -
    Other Transistors
    350V
    2W
    240
    not_compliant
    4A
    30
    -
    3
    Not Qualified
    1
    Single
    2W
    AMPLIFIER
    30MHz
    NPN
    NPN
    350V
    4A
    10 @ 2A 5V
    10μA ICBO
    500mV @ 100mA, 1A
    350V
    30MHz
    500mV
    350V
    5V
    100
    Non-RoHS Compliant
    Contains Lead
    NO
    -
    COLLECTOR
    TO-220AB
    -
    -
    -
    -
    -
    -
    -
    -
    30MHz
    MJE181 vs MJE15034
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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