Fairchild/ON Semiconductor MJE170STU

MJE170STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.7V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

MJE170STU Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 50MHz


MJE170STU Applications
There are a lot of ON Semiconductor
MJE170STU applications of single BJT transistors.


Inverter
Interface
Driver
Muting