ON Semiconductor MJE15033G
- Part Number:
- MJE15033G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465324-MJE15033G
- Description:
- TRANS PNP 250V 8A TO220AB
- Datasheet:
- MJE15033G
ON Semiconductor MJE15033G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15033G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-250V
- Max Power Dissipation50W
- Peak Reflow Temperature (Cel)260
- Current Rating-8A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A 5V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)250V
- Emitter Base Voltage (VEBO)5V
- hFE Min10
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE15033G Description
MJE15033G belongs to the family of complementary silicon Epitaxial-Base power transistors that are manufactured by ON Semiconductor for use as high-frequency drivers in audio amplifiers. MJE15033G contains three pins, that is, emitter, base, and collector. It is embedded in the TO-220 package.
MJE15033G Features
High current gain
RoHS compliant
Embedded in the TO-220 package
MJE15033G Applications
Audio amplifiers
Switching applications
General-purpose amplifiers
MJE15033G belongs to the family of complementary silicon Epitaxial-Base power transistors that are manufactured by ON Semiconductor for use as high-frequency drivers in audio amplifiers. MJE15033G contains three pins, that is, emitter, base, and collector. It is embedded in the TO-220 package.
MJE15033G Features
High current gain
RoHS compliant
Embedded in the TO-220 package
MJE15033G Applications
Audio amplifiers
Switching applications
General-purpose amplifiers
MJE15033G More Descriptions
Transistor, Bipolar,Si,PNP,Power,VCEO 220VDC,IC 8A,PD 50W,TO-220AB,VCBO 250VDC
Trans GP BJT PNP 250V 8A 2000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 250 V 8 A PNP Complementary Silicon Plastic Power Transistor - TO-220
Bipolar Transistor, PNP, 250 V, 8.0 A
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor PNP -8A/-250V 50W TO220 MJE 15033G
TO-220C Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 250V 8A 2000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 250 V 8 A PNP Complementary Silicon Plastic Power Transistor - TO-220
Bipolar Transistor, PNP, 250 V, 8.0 A
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor PNP -8A/-250V 50W TO220 MJE 15033G
TO-220C Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to MJE15033G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminal FinishAdditional FeatureReach Compliance CodeBase Part NumberQualification StatusTerminal PositionJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MJE15033GACTIVE (Last Updated: 3 days ago)7 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Other Transistors-250V50W260-8A30MHz4031Single2WCOLLECTORAMPLIFIER30MHzPNPPNP250V8A10 @ 2A 5V10μA ICBOTO-220AB500mV @ 100mA, 1A250V30MHz500mV250V5V1015.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free--------------
-
LAST SHIPMENTS (Last Updated: 1 week ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Other Transistors450V75W2405A-3031Single-COLLECTORSWITCHING13MHzNPNNPN750mV5A14 @ 300mA 5V100μATO-220AB750mV @ 500mA, 2.5A450V13MHz920mV1kV9V12-----Non-RoHS CompliantContains LeadSWITCHMODE™Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEnot_compliantMJE18004Not Qualified-------
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---Through HoleTO-220-3NO--SILICON-65°C~150°C TJTube-e0noObsolete3 (168 Hours)3----240--3031--COLLECTORSWITCHING-NPNNPN--14 @ 200mA 5V100μATO-220AB500mV @ 200mA, 1A-13MHz---------Non-RoHS Compliant-SWITCHMODE™TIN LEADLEADFORM OPTIONS ARE AVAILABLE--COMMERCIALSINGLER-PSFM-T3SINGLE50W450V2A13MHz
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----TO-220C-----Tube-packed----------------------------------------RoHS Compliant--------------
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