MJE15030G

ON Semiconductor MJE15030G

Part Number:
MJE15030G
Manufacturer:
ON Semiconductor
Ventron No:
2845233-MJE15030G
Description:
TRANS NPN 150V 8A TO220AB
ECAD Model:
Datasheet:
MJE15030G

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Specifications
ON Semiconductor MJE15030G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15030G.
  • Lifecycle Status
    ACTIVE (Last Updated: 20 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    150V
  • Max Power Dissipation
    50W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Frequency
    30MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    30MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    150V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 2V
  • Current - Collector Cutoff (Max)
    100μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    150V
  • Transition Frequency
    30MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Collector Base Voltage (VCBO)
    150V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • Height
    15.748mm
  • Length
    10.2616mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE15030G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 30MHz.A maximum collector current of 8A volts can be achieved.

MJE15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz


MJE15030G Applications
There are a lot of ON Semiconductor
MJE15030G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE15030G More Descriptions
Transistor GP BJT NPN 150V 8A 3-Pin (3 Tab) TO-220AB Rail
ON Semi MJE15030G NPN Bipolar Transistor, 8 A, 150 V, 3-Pin TO-220AB | ON Semiconductor MJE15030G
Bipolar Transistor, NPN, 150 V, 8.0 A
MJE Series 120 V 8 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Transistor, TO-220, NPN, 150V
TRANSISTOR, NPN, 150V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 8A; DC Current Gain hFE: 40hFE; Transistor
Product Comparison
The three parts on the right have similar specifications to MJE15030G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series:
    Series
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    View Compare
  • MJE15030G
    MJE15030G
    ACTIVE (Last Updated: 20 hours ago)
    8 Weeks
    Tin
    Through Hole
    TO-220-3
    NO
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    150V
    50W
    260
    8A
    30MHz
    40
    3
    1
    Single
    2W
    COLLECTOR
    AMPLIFIER
    30MHz
    NPN
    NPN
    150V
    8A
    20 @ 4A 2V
    100μA
    TO-220AB
    500mV @ 100mA, 1A
    150V
    30MHz
    500mV
    150V
    5V
    40
    15.748mm
    10.2616mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • MJE180
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    *
    -
    -
    -
    -
  • MJE13007
    LAST SHIPMENTS (Last Updated: 1 day ago)
    -
    -
    Through Hole
    TO-220-3
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2009
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    400V
    80W
    240
    8A
    -
    30
    3
    1
    Single
    80W
    COLLECTOR
    SWITCHING
    14MHz
    NPN
    NPN
    3V
    8A
    5 @ 5A 5V
    100μA
    TO-220AB
    3V @ 2A, 8A
    400V
    14MHz
    1V
    700V
    9V
    8
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    SWITCHMODE™
    Tin/Lead (Sn/Pb)
    not_compliant
    Not Qualified
  • MJE15034
    OBSOLETE (Last Updated: 2 weeks ago)
    -
    -
    Through Hole
    TO-220-3
    NO
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2004
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    350V
    2W
    240
    4A
    30MHz
    30
    3
    1
    Single
    2W
    COLLECTOR
    AMPLIFIER
    30MHz
    NPN
    NPN
    350V
    4A
    10 @ 2A 5V
    10μA ICBO
    TO-220AB
    500mV @ 100mA, 1A
    350V
    30MHz
    500mV
    350V
    5V
    100
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    Tin/Lead (Sn/Pb)
    not_compliant
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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