ON Semiconductor MJE15030G
- Part Number:
- MJE15030G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845233-MJE15030G
- Description:
- TRANS NPN 150V 8A TO220AB
- Datasheet:
- MJE15030G
ON Semiconductor MJE15030G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15030G.
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC150V
- Max Power Dissipation50W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 2V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage150V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE15030G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 30MHz.A maximum collector current of 8A volts can be achieved.
MJE15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJE15030G Applications
There are a lot of ON Semiconductor
MJE15030G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 30MHz.A maximum collector current of 8A volts can be achieved.
MJE15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJE15030G Applications
There are a lot of ON Semiconductor
MJE15030G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE15030G More Descriptions
Transistor GP BJT NPN 150V 8A 3-Pin (3 Tab) TO-220AB Rail
ON Semi MJE15030G NPN Bipolar Transistor, 8 A, 150 V, 3-Pin TO-220AB | ON Semiconductor MJE15030G
Bipolar Transistor, NPN, 150 V, 8.0 A
MJE Series 120 V 8 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Transistor, TO-220, NPN, 150V
TRANSISTOR, NPN, 150V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 8A; DC Current Gain hFE: 40hFE; Transistor
ON Semi MJE15030G NPN Bipolar Transistor, 8 A, 150 V, 3-Pin TO-220AB | ON Semiconductor MJE15030G
Bipolar Transistor, NPN, 150 V, 8.0 A
MJE Series 120 V 8 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Transistor, TO-220, NPN, 150V
TRANSISTOR, NPN, 150V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 8A; DC Current Gain hFE: 40hFE; Transistor
The three parts on the right have similar specifications to MJE15030G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeries:SeriesTerminal FinishReach Compliance CodeQualification StatusView Compare
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MJE15030GACTIVE (Last Updated: 20 hours ago)8 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Other Transistors150V50W2608A30MHz4031Single2WCOLLECTORAMPLIFIER30MHzNPNNPN150V8A20 @ 4A 2V100μATO-220AB500mV @ 100mA, 1A150V30MHz500mV150V5V4015.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free------
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LAST SHIPMENTS (Last Updated: 1 day ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2009e0noObsolete1 (Unlimited)3EAR99Other Transistors400V80W2408A-3031Single80WCOLLECTORSWITCHING14MHzNPNNPN3V8A5 @ 5A 5V100μATO-220AB3V @ 2A, 8A400V14MHz1V700V9V8-----Non-RoHS CompliantContains Lead-SWITCHMODE™Tin/Lead (Sn/Pb)not_compliantNot Qualified
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OBSOLETE (Last Updated: 2 weeks ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2004e0noObsolete1 (Unlimited)3EAR99Other Transistors350V2W2404A30MHz3031Single2WCOLLECTORAMPLIFIER30MHzNPNNPN350V4A10 @ 2A 5V10μA ICBOTO-220AB500mV @ 100mA, 1A350V30MHz500mV350V5V100-----Non-RoHS CompliantContains Lead--Tin/Lead (Sn/Pb)not_compliantNot Qualified
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