ON Semiconductor MJE15028G
- Part Number:
- MJE15028G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465494-MJE15028G
- Description:
- TRANS NPN 120V 8A TO220AB
- Datasheet:
- MJE15028G
ON Semiconductor MJE15028G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE15028G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC120V
- Max Power Dissipation50W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)120V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 2V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage120V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE15028G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 8A volts.
MJE15028G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJE15028G Applications
There are a lot of ON Semiconductor
MJE15028G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 8A volts.
MJE15028G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJE15028G Applications
There are a lot of ON Semiconductor
MJE15028G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE15028G More Descriptions
Trans GP BJT NPN 120V 8A 50000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 120 V 8 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
8.0 A, 120 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 120VDC, IC 8A, PD 50W, TO-220AB, VCBO 120VDC | ON Semiconductor MJE15028G
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 8A; DC Current Gain hFE: 40hFE; Transistor Case Styl
Power Transistor, Npn, 120V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:120V; Continuous Collector Current:8A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhzrohs Compliant: Yes |Onsemi MJE15028G.
MJE Series 120 V 8 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
8.0 A, 120 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 120VDC, IC 8A, PD 50W, TO-220AB, VCBO 120VDC | ON Semiconductor MJE15028G
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 8A; DC Current Gain hFE: 40hFE; Transistor Case Styl
Power Transistor, Npn, 120V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:120V; Continuous Collector Current:8A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhzrohs Compliant: Yes |Onsemi MJE15028G.
The three parts on the right have similar specifications to MJE15028G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminal FinishAdditional FeatureReach Compliance CodeBase Part NumberQualification StatusMountView Compare
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MJE15028GACTIVE (Last Updated: 1 day ago)2 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2004e3yesActive1 (Unlimited)3EAR99Other Transistors120V50W2608A30MHz4031Single2WCOLLECTORAMPLIFIER30MHzNPNNPN120V8A20 @ 4A 2V100μATO-220AB500mV @ 100mA, 1A120V30MHz500mV120V5V4015.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free--------
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LAST SHIPMENTS (Last Updated: 1 week ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Other Transistors450V75W2405A-3031Single-COLLECTORSWITCHING13MHzNPNNPN750mV5A14 @ 300mA 5V100μATO-220AB750mV @ 500mA, 2.5A450V13MHz920mV1kV9V12-----Non-RoHS CompliantContains LeadSWITCHMODE™Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEnot_compliantMJE18004Not Qualified-
-
OBSOLETE (Last Updated: 2 weeks ago)--Through HoleTO-220-3NO3-SILICON-65°C~150°C TJTube2004e0noObsolete1 (Unlimited)3EAR99Other Transistors350V2W2404A30MHz3031Single2WCOLLECTORAMPLIFIER30MHzNPNNPN350V4A10 @ 2A 5V10μA ICBOTO-220AB500mV @ 100mA, 1A350V30MHz500mV350V5V100-----Non-RoHS CompliantContains Lead-Tin/Lead (Sn/Pb)-not_compliant-Not Qualified-
-
OBSOLETE (Last Updated: 1 week ago)--Through HoleTO-220-3-3-SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Other Transistors400V2W24012A-3031Single2WCOLLECTORSWITCHING4MHzNPNNPN3V12A8 @ 5A 5V-TO-220AB3V @ 3A, 12A400V4MHz1V700V9V8-----Non-RoHS CompliantContains Lead-Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEnot_compliant-Not QualifiedThrough Hole
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