STMicroelectronics MJD44H11T4-A
- Part Number:
- MJD44H11T4-A
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464008-MJD44H11T4-A
- Description:
- TRANS NPN 80V 8A DPAK
- Datasheet:
- MJD44H11T4-A
STMicroelectronics MJD44H11T4-A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD44H11T4-A.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Max Power Dissipation20W
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJD44
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation20W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)10μA
- JEDEC-95 CodeTO-252AA
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage80V
- Max Breakdown Voltage80V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD44H11T4-A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 8A volts at its maximum.
MJD44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
MJD44H11T4-A Applications
There are a lot of STMicroelectronics
MJD44H11T4-A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 8A volts at its maximum.
MJD44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
MJD44H11T4-A Applications
There are a lot of STMicroelectronics
MJD44H11T4-A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD44H11T4-A More Descriptions
Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin(2 Tab) DPAK T/R
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Trans, Aec-Q101, Npn, 80V, 8A, 20W Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4-A
MJD44H11T4 Series 80 V 8 A SMT Complementary Power Transistor - TO-252-3
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Trans, Aec-Q101, Npn, 80V, 8A, 20W Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4-A
MJD44H11T4 Series 80 V 8 A SMT Complementary Power Transistor - TO-252-3
The three parts on the right have similar specifications to MJD44H11T4-A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageEmitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingSurface MountPublishedPbfree CodeVoltage - Rated DCCurrent RatingFrequencyElement ConfigurationHalogen FreeGain Bandwidth ProductTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)hFE MinHeightLengthWidthWeightREACH SVHCView Compare
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MJD44H11T4-ASurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJCut Tape (CT)e3Active1 (Unlimited)2EAR99Matte Tin (Sn) - annealedOther Transistors20WSINGLEGULL WING26030MJD443R-PSSO-G21SINGLE20WCOLLECTORSWITCHINGNPNNPN80V8A40 @ 4A 1V10μATO-252AA1V @ 400mA, 8A80V80V5VNoROHS3 CompliantLead Free------------------------------------
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-----------------------------------------250V1V @ 200mA, 1ANPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount10MHz30 @ 300mA, 10V100µA1A---------------------
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-Through HoleTO-251-3 Short Leads, IPak, TO-251AA4SILICON-55°C~150°C TJTubee3Active1 (Unlimited)3EAR99-Other Transistors1.75W--26040MJD45H114R-PSIP-T31-1.75WCOLLECTORSWITCHINGPNPPNP80V8A40 @ 4A 1V1μA-1V @ 400mA, 8A80V-5VNoROHS3 CompliantLead Free--------------ACTIVE (Last Updated: 15 hours ago)8 WeeksTinNO2003yes-80V-8A90MHzSingleHalogen Free90MHz40MHz1V5V606.22mm6.73mm2.38mm--
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)2EAR99-Other Transistors20W-GULL WING26040MJD423R-PSSO-G21-1.75WCOLLECTORSWITCHINGPNPPNP100V6A15 @ 3A 4V50μA-1.5V @ 600mA, 6A100V100V5VNoROHS3 CompliantLead Free--------------ACTIVE (Last Updated: 10 hours ago)8 WeeksTinYES2002yes-100V-6A3MHzSingle-3MHz3MHz1.5V100V302.38mm6.73mm6.22mm4.535924gNo SVHC
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