MJD44H11T4-A

STMicroelectronics MJD44H11T4-A

Part Number:
MJD44H11T4-A
Manufacturer:
STMicroelectronics
Ventron No:
2464008-MJD44H11T4-A
Description:
TRANS NPN 80V 8A DPAK
ECAD Model:
Datasheet:
MJD44H11T4-A

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Specifications
STMicroelectronics MJD44H11T4-A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD44H11T4-A.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Cut Tape (CT)
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    20W
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MJD44
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    20W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 4A 1V
  • Current - Collector Cutoff (Max)
    10μA
  • JEDEC-95 Code
    TO-252AA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 400mA, 8A
  • Collector Emitter Breakdown Voltage
    80V
  • Max Breakdown Voltage
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD44H11T4-A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 8A volts at its maximum.

MJD44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


MJD44H11T4-A Applications
There are a lot of STMicroelectronics
MJD44H11T4-A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD44H11T4-A More Descriptions
Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin(2 Tab) DPAK T/R
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Trans, Aec-Q101, Npn, 80V, 8A, 20W Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4-A
MJD44H11T4 Series 80 V 8 A SMT Complementary Power Transistor - TO-252-3
Product Comparison
The three parts on the right have similar specifications to MJD44H11T4-A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Surface Mount
    Published
    Pbfree Code
    Voltage - Rated DC
    Current Rating
    Frequency
    Element Configuration
    Halogen Free
    Gain Bandwidth Product
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    hFE Min
    Height
    Length
    Width
    Weight
    REACH SVHC
    View Compare
  • MJD44H11T4-A
    MJD44H11T4-A
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Cut Tape (CT)
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    20W
    SINGLE
    GULL WING
    260
    30
    MJD44
    3
    R-PSSO-G2
    1
    SINGLE
    20W
    COLLECTOR
    SWITCHING
    NPN
    NPN
    80V
    8A
    40 @ 4A 1V
    10μA
    TO-252AA
    1V @ 400mA, 8A
    80V
    80V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD47T4
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    1V @ 200mA, 1A
    NPN
    D-Pak
    -
    15W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    10MHz
    30 @ 300mA, 10V
    100µA
    1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD45H11-1G
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    4
    SILICON
    -55°C~150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    1.75W
    -
    -
    260
    40
    MJD45H11
    4
    R-PSIP-T3
    1
    -
    1.75W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    80V
    8A
    40 @ 4A 1V
    1μA
    -
    1V @ 400mA, 8A
    80V
    -
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 15 hours ago)
    8 Weeks
    Tin
    NO
    2003
    yes
    -80V
    -8A
    90MHz
    Single
    Halogen Free
    90MHz
    40MHz
    1V
    5V
    60
    6.22mm
    6.73mm
    2.38mm
    -
    -
  • MJD42CT4G
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    20W
    -
    GULL WING
    260
    40
    MJD42
    3
    R-PSSO-G2
    1
    -
    1.75W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    100V
    6A
    15 @ 3A 4V
    50μA
    -
    1.5V @ 600mA, 6A
    100V
    100V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 10 hours ago)
    8 Weeks
    Tin
    YES
    2002
    yes
    -100V
    -6A
    3MHz
    Single
    -
    3MHz
    3MHz
    1.5V
    100V
    30
    2.38mm
    6.73mm
    6.22mm
    4.535924g
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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