Fairchild/ON Semiconductor MJD350TF
- Part Number:
- MJD350TF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068755-MJD350TF
- Description:
- TRANS PNP 300V 0.5A DPAK
- ECAD Model:
-
- Datasheet:
- MJD350TF
Fairchild/ON Semiconductor MJD350TF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJD350TF.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
- Factory Lead Time9 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Current Rating-500mA
- Base Part NumberMJD350
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)100μA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency3MHz
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)-300V
- Emitter Base Voltage (VEBO)-3V
- hFE Min30
- Height2.3mm
- Length6.6mm
- Width6.1mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MJD350TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at -3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350TF Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -3V
the current rating of this device is -500mA
a transition frequency of 3MHz
MJD350TF Applications
There are a lot of ON Semiconductor
MJD350TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at -3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350TF Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -3V
the current rating of this device is -500mA
a transition frequency of 3MHz
MJD350TF Applications
There are a lot of ON Semiconductor
MJD350TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD350TF More Descriptions
0.5 A, 300 V High Voltage PNP Bipolar Power Transistor
MJD Series PNP 1.56 W 300 V 0.5 A SMT Epitaxial Silicon Transistor - TO-252-3
Trans GP BJT PNP 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Bipolar Transistors - BJT PNP Epitaxial Sil
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD Series PNP 1.56 W 300 V 0.5 A SMT Epitaxial Silicon Transistor - TO-252-3
Trans GP BJT PNP 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Bipolar Transistors - BJT PNP Epitaxial Sil
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
The three parts on the right have similar specifications to MJD350TF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingBase Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountCase ConnectionTransistor ApplicationGain Bandwidth ProductCollector Emitter Saturation VoltageREACH SVHCContact PlatingSurface MountFrequencyView Compare
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MJD350TFLAST SHIPMENTS (Last Updated: 5 days ago)9 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON150°C TJTape & Reel (TR)2001e3yesObsolete1 (Unlimited)2EAR99Tin (Sn)Other Transistors-300V1.56WGULL WING-500mAMJD350R-PSSO-G21Single1.56WPNPPNP300V500mA30 @ 50mA 10V100μA300V3MHz300V-300V-3V302.3mm6.6mm6.1mmNoRoHS CompliantLead Free------------------ -
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------MJD32-----PNP--10 @ 3A 4V50μA------------D-Pak1.56W1.2V @ 375mA, 3A100V3A3MHz-----------
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-21 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)2EAR99Matte Tin (Sn)Other Transistors-1.56WGULL WING--R-PSSO-G21Single--PNP100V3A10 @ 3A 4V1μA100V3MHz100V100V6V102.4mm6.8mm6.2mmNoROHS3 CompliantLead Free-15W1.2V @ 375mA, 3A---260404COLLECTORSWITCHING3MHz1.2VNo SVHC---
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ACTIVE (Last Updated: 6 days ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99-Other Transistors100V1.56WGULL WING3AMJD31R-PSSO-G21Single1.56WNPNNPN100V3A10 @ 3A 4V50μA100V3MHz100V100V5V252.38mm6.73mm6.22mmNoROHS3 CompliantLead Free--1.2V @ 375mA, 3A---260403COLLECTORAMPLIFIER3MHz1.2VNo SVHCTinYES3MHz
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