STMicroelectronics MJD350T4
- Part Number:
- MJD350T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2462883-MJD350T4
- Description:
- TRANS PNP 300V 0.5A DPAK
- Datasheet:
- MJD350T4
STMicroelectronics MJD350T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD350T4.
- Lifecycle StatusACTIVE (Last Updated: 6 months ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation15W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJD35
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation15W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)100μA ICBO
- Collector Emitter Breakdown Voltage300V
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)3V
- hFE Min30
- Height2.4mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD350T4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350T4 Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
MJD350T4 Applications
There are a lot of STMicroelectronics
MJD350T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350T4 Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
MJD350T4 Applications
There are a lot of STMicroelectronics
MJD350T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD350T4 More Descriptions
Bipolar (Bjt) Single Transistor, Pnp, 300 V, 15 W, -500 Ma, 30 |Stmicroelectronics MJD350T4
300V 15W 500mA PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 300V 0.5A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD350 Series PNP 300 V 0.5 A Complementary Silicon Power Transistor - TO-252
Bipolar Transistors - BJT PNP Gen Pur Switch
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Transistor, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:15W; DC
TRANSISTOR, PNP, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Application Code: PGP; Continuous Collector Current Ic Max: -500mA; Current Ic Continuous a Max: -50mA; Current Ic hFE: 50mA; Current Icbo: 100µA; Hfe Min: 30; No. of Transistors: 1; Power Dissipation Ptot Max: 15W; Voltage Vcbo: 300V
300V 15W 500mA PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 300V 0.5A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD350 Series PNP 300 V 0.5 A Complementary Silicon Power Transistor - TO-252
Bipolar Transistors - BJT PNP Gen Pur Switch
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Transistor, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:15W; DC
TRANSISTOR, PNP, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Application Code: PGP; Continuous Collector Current Ic Max: -500mA; Current Ic Continuous a Max: -50mA; Current Ic hFE: 50mA; Current Icbo: 100µA; Hfe Min: 30; No. of Transistors: 1; Power Dissipation Ptot Max: 15W; Voltage Vcbo: 300V
The three parts on the right have similar specifications to MJD350T4.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightPublishedPbfree CodeTransition FrequencySupplier Device PackagePower - MaxVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionContact PlatingSurface MountFrequencyGain Bandwidth ProductCollector Emitter Saturation VoltageView Compare
-
MJD350T4ACTIVE (Last Updated: 6 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJCut Tape (CT)e3Active1 (Unlimited)2EAR99Matte Tin (Sn) - annealedOther Transistors-300V15WGULL WING260-500mA30MJD353R-PSSO-G21Single15WCOLLECTORSWITCHINGPNPPNP300V500mA30 @ 50mA 10V100μA ICBO300V300V300V3V302.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free----------------
-
LAST SHIPMENTS (Last Updated: 5 days ago)9 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)2EAR99Tin (Sn)Other Transistors-300V1.56WGULL WING--500mA-MJD350-R-PSSO-G21Single1.56W--PNPPNP300V500mA30 @ 50mA 10V100μA300V300V-300V-3V302.3mm6.6mm6.1mm-NoRoHS CompliantLead Free260.37mg2001yes3MHz-----------
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)----------MJD32--------PNP--10 @ 3A 4V50μA----------------D-Pak1.56W1.2V @ 375mA, 3A100V3A3MHz-----
-
ACTIVE (Last Updated: 6 days ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)2EAR99-Other Transistors100V1.56WGULL WING2603A40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIERNPNNPN100V3A10 @ 3A 4V50μA100V100V100V5V252.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-2005yes3MHz--1.2V @ 375mA, 3A---TinYES3MHz3MHz1.2V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 October 2023
What Is CD4017BE CMOS Counter And How It Works?
Ⅰ. Overview of CD4017BE counterⅡ. Symbol, footprint and pin configuration of CD4017BEⅢ. Technical parameters of CD4017BEⅣ. What are the features of CD4017BE?Ⅴ. How does CD4017BE work?Ⅵ. What are... -
18 October 2023
Get to Know the MOC3063 Triac Driver
Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3063 optocouplerⅢ. Symbol, footprint and pin configuration of MOC3063Ⅳ. Technical parameters of MOC3063Ⅴ. What are the features of MOC3063?Ⅵ. Working principle... -
19 October 2023
TIP122 Darlington Transistor: Symbol, Features, Applications and More
Ⅰ. What is Darlington tube?Ⅱ. Overview of TIP122 transistorⅢ. Symbol and footprint of TIP122 transistorⅣ. Technical parameters of TIP122 transistorⅤ. What are the features of TIP122 transistor?Ⅵ. Pin... -
19 October 2023
LM3900N Quadruple Operational Amplifier: Equivalent, Working Principle and LM3900N vs LM3900DR
Ⅰ. Overview of LM3900NⅡ. Symbol and footprint of LM3900NⅢ. Technical parameters of LM3900NⅣ. What are the features of LM3900N?Ⅴ. Pin configuration of LM3900NⅥ. Circuit and working principle of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.