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MJD32C-13

Diodes Incorporated MJD32C-13

Part Number:
MJD32C-13
Manufacturer:
Diodes Incorporated
Ventron No:
2463957-MJD32C-13
Description:
TRANS PNP 100V 3A TO252-3L
ECAD Model:
Datasheet:
MJD32C-13

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Specifications
Diodes Incorporated MJD32C-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MJD32C-13.
  • Factory Lead Time
    21 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.56W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Power - Max
    15W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    3MHz
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 3A 4V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    1.2V @ 375mA, 3A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    1.2V
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    10
  • Height
    2.4mm
  • Length
    6.8mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD32C-13 Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 3MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 3A volts.

MJD32C-13 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 3MHz


MJD32C-13 Applications
There are a lot of Diodes Incorporated
MJD32C-13 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD32C-13 More Descriptions
MJD32C Series 100 V 3 A 15 Watt PNP Surface Mount Transistor - TO-252-3
100V 15W 10@3A,4V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Trans GP BJT PNP 100V 3A 3900mW 3-Pin(2 Tab) DPAK T/R
Product Comparison
The three parts on the right have similar specifications to MJD32C-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Case Connection
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Weight
    Voltage - Rated DC
    Current Rating
    Base Part Number
    Power Dissipation
    Polarity/Channel Type
    Contact Plating
    Surface Mount
    Frequency
    View Compare
  • MJD32C-13
    MJD32C-13
    Diodes Incorporated
    21 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1.56W
    GULL WING
    260
    40
    4
    R-PSSO-G2
    1
    Single
    COLLECTOR
    15W
    SWITCHING
    3MHz
    PNP
    100V
    3A
    10 @ 3A 4V
    1μA
    1.2V @ 375mA, 3A
    100V
    3MHz
    1.2V
    100V
    100V
    6V
    10
    2.4mm
    6.8mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD350TF
    MJD350TF
    Fairchild/ON Semiconductor
    9 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    1.56W
    GULL WING
    -
    -
    -
    R-PSSO-G2
    1
    Single
    -
    -
    -
    -
    PNP
    300V
    500mA
    30 @ 50mA 10V
    100μA
    -
    300V
    3MHz
    -
    300V
    -300V
    -3V
    30
    2.3mm
    6.6mm
    6.1mm
    -
    No
    RoHS Compliant
    Lead Free
    LAST SHIPMENTS (Last Updated: 5 days ago)
    260.37mg
    -300V
    -500mA
    MJD350
    1.56W
    PNP
    -
    -
    -
    MJD32C-13 vs MJD350TF
  • MJD31CT4G
    MJD31CT4G
    ON Semiconductor
    8 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    1.56W
    GULL WING
    260
    40
    3
    R-PSSO-G2
    1
    Single
    COLLECTOR
    -
    AMPLIFIER
    3MHz
    NPN
    100V
    3A
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    100V
    3MHz
    1.2V
    100V
    100V
    5V
    25
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 6 days ago)
    -
    100V
    3A
    MJD31
    1.56W
    NPN
    Tin
    YES
    3MHz
    MJD32C-13 vs MJD31CT4G
  • MJD350T4
    MJD350T4
    STMicroelectronics
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Cut Tape (CT)
    -
    e3
    -
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    15W
    GULL WING
    260
    30
    3
    R-PSSO-G2
    1
    Single
    COLLECTOR
    -
    SWITCHING
    -
    PNP
    300V
    500mA
    30 @ 50mA 10V
    100μA ICBO
    -
    300V
    -
    -
    300V
    300V
    3V
    30
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 6 months ago)
    -
    -300V
    -500mA
    MJD35
    15W
    PNP
    -
    -
    -
    MJD32C-13 vs MJD350T4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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