ON Semiconductor MJD31CT4G
- Part Number:
- MJD31CT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462884-MJD31CT4G
- Description:
- TRANS NPN 100V 3A DPAK
- ECAD Model:
-
- Datasheet:
- MJD31CT4G
ON Semiconductor MJD31CT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31CT4G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD31
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD31CT4G Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD31CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CT4G Applications
There are a lot of ON Semiconductor
MJD31CT4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD31CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CT4G Applications
There are a lot of ON Semiconductor
MJD31CT4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD31CT4G More Descriptions
Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
ON Semi MJD31CT4G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin DPAK
3.0 A, 100 V NPN Bipolar Power Transistor
Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3
BIPOLAR TRANSISTOR, NPN, 100V, 3A, TO-252
Bipolar Transistors - BJT 3A 100V 15W NPN
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD31CT4G.
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
ON Semi MJD31CT4G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin DPAK
3.0 A, 100 V NPN Bipolar Power Transistor
Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3
BIPOLAR TRANSISTOR, NPN, 100V, 3A, TO-252
Bipolar Transistors - BJT 3A 100V 15W NPN
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD31CT4G.
The three parts on the right have similar specifications to MJD31CT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountTerminal FinishView Compare
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MJD31CT4GACTIVE (Last Updated: 6 days ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V100V5V252.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-------- -
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------MJD32---------PNP--10 @ 3A 4V50μA1.2V @ 375mA, 3A--------------D-Pak1.56W100V3A3MHz--
-
-21 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)2EAR99Other Transistors-1.56WGULL WING260--40-4R-PSSO-G21Single-COLLECTORSWITCHING3MHz-PNP100V3A10 @ 3A 4V1μA1.2V @ 375mA, 3A100V3MHz1.2V100V100V6V102.4mm6.8mm6.2mmNo SVHCNoROHS3 CompliantLead Free-15W---Surface MountMatte Tin (Sn)
-
ACTIVE (Last Updated: 6 months ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON150°C TJCut Tape (CT)-e3-Active1 (Unlimited)2EAR99Other Transistors-300V15WGULL WING260-500mA-30MJD353R-PSSO-G21Single15WCOLLECTORSWITCHING-PNPPNP300V500mA30 @ 50mA 10V100μA ICBO-300V--300V300V3V302.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free-----Surface MountMatte Tin (Sn) - annealed
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