ON Semiconductor MJ2955G
- Part Number:
- MJ2955G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845240-MJ2955G
- Description:
- TRANS PNP 60V 15A TO-3
- Datasheet:
- MJ2955G
ON Semiconductor MJ2955G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ2955G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation115W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating-15A
- Frequency2.5MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJ2955
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation115W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product2.5MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic3V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency2.5MHz
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- Height26.67mm
- Length39.37mm
- Width8.509mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ2955G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2.5MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
MJ2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz
MJ2955G Applications
There are a lot of ON Semiconductor
MJ2955G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2.5MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
MJ2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz
MJ2955G Applications
There are a lot of ON Semiconductor
MJ2955G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ2955G More Descriptions
15 A, 60 V PNP Bipolar Power Transistor
Trans GP BJT PNP 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
BIPOLAR Transistor, PNP -60V TO-204; Tra; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V;
Transistor, Bipolar,Si,PNP,Power,VCEO 60VDC,IC 15A,PD 115W,TO-204AA (TO-3),hFE 5 | ON Semiconductor MJ2955G
TRANSISTOR, BIPOL, PNP, 60V, TO-3-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: -15A; DC Current Gain hFE: 5hFE; Trans
Trans GP BJT PNP 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
BIPOLAR Transistor, PNP -60V TO-204; Tra; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V;
Transistor, Bipolar,Si,PNP,Power,VCEO 60VDC,IC 15A,PD 115W,TO-204AA (TO-3),hFE 5 | ON Semiconductor MJ2955G
TRANSISTOR, BIPOL, PNP, 60V, TO-3-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: -15A; DC Current Gain hFE: 5hFE; Trans
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
31 January 2024
TXS0108EPWR Level Shifter Specifications, Architecture, Functions, Package and Applications
Ⅰ. What is TXS0108EPWR?Ⅱ. Specifications of TXS0108EPWRⅢ. Architecture of TXS0108EPWRⅣ. Functions of TXS0108EPWRⅤ. Package of TXS0108EPWRⅥ. What are the advantages and disadvantages of TXS0108EPWR?Ⅶ. Where is TXS0108EPWR used?The... -
01 February 2024
L7812CV Voltage Regulator: Internal Structure, Characteristics, Specifications and Other Details
Ⅰ. L7812CV descriptionⅡ. Internal structure and working principle of L7812CVⅢ. Pin configuration of L7812CVⅣ. What are the characteristics of L7812CV?Ⅴ. How to judge the quality of L7812CV?Ⅵ. Specifications... -
01 February 2024
REF3030AIDBZR Specifications, Symbol, Applications and REF3030AIDBZR vs REF3030AIDBZT
Ⅰ. Overview of REF3030AIDBZRⅡ. Specifications of REF3030AIDBZRⅢ. Symbol, footprint and pin configuration of REF3030AIDBZRⅣ. Features of REF3030AIDBZRⅤ. In which applications can we use REF3030AIDBZR?Ⅵ. What is the difference... -
02 February 2024
TL431AIDBZR Shunt Regulator Replacements, Working Principle, Typical Characteristics, Performance and Function
Ⅰ. Description of TL431AIDBZRⅡ. How does TL431AIDBZR work?Ⅲ. Typical characteristics of TL431AIDBZRⅣ. Performance of TL431AIDBZRⅤ. Specifications of TL431AIDBZRⅥ. How to adjust the output voltage of TL431AIDBZR?Ⅶ. Absolute maximum...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.