MJ2955G

ON Semiconductor MJ2955G

Part Number:
MJ2955G
Manufacturer:
ON Semiconductor
Ventron No:
2845240-MJ2955G
Description:
TRANS PNP 60V 15A TO-3
ECAD Model:
Datasheet:
MJ2955G

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Specifications
ON Semiconductor MJ2955G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ2955G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    115W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -15A
  • Frequency
    2.5MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJ2955
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    115W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    2.5MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 4V
  • Current - Collector Cutoff (Max)
    700μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 3.3A, 10A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    2.5MHz
  • Collector Emitter Saturation Voltage
    1.1V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    20
  • Height
    26.67mm
  • Length
    39.37mm
  • Width
    8.509mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJ2955G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2.5MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

MJ2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz


MJ2955G Applications
There are a lot of ON Semiconductor
MJ2955G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJ2955G More Descriptions
15 A, 60 V PNP Bipolar Power Transistor
Trans GP BJT PNP 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
BIPOLAR Transistor, PNP -60V TO-204; Tra; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V;
Transistor, Bipolar,Si,PNP,Power,VCEO 60VDC,IC 15A,PD 115W,TO-204AA (TO-3),hFE 5 | ON Semiconductor MJ2955G
TRANSISTOR, BIPOL, PNP, 60V, TO-3-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: -15A; DC Current Gain hFE: 5hFE; Trans
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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