ON Semiconductor MJ21195G
- Part Number:
- MJ21195G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463292-MJ21195G
- Description:
- TRANS PNP 250V 16A TO3
- ECAD Model:
-
- Datasheet:
- MJ21195G
ON Semiconductor MJ21195G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ21195G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-250V
- Max Power Dissipation250W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating-16A
- Frequency4MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product4MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current16A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 8A 5V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ21195G Overview
In this device, the DC current gain is 25 @ 8A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 3.2A, 16A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-16A).4MHz is present in the transition frequency.Maximum collector currents can be below 16A volts.
MJ21195G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz
MJ21195G Applications
There are a lot of ON Semiconductor
MJ21195G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 25 @ 8A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 3.2A, 16A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-16A).4MHz is present in the transition frequency.Maximum collector currents can be below 16A volts.
MJ21195G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz
MJ21195G Applications
There are a lot of ON Semiconductor
MJ21195G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ21195G More Descriptions
Bipolar Transistor, PNP, 250 V, 16 A
Trans GP BJT PNP 250V 16A 3-Pin(2 Tab) TO-204 Tray - Trays
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
250V 250W 16A PNP TO-204AA Bipolar Transistors - BJT ROHS
MJ Series 250 V 16 A Screw Mount PNP Silicon Power Transistor - TO-204AA
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The MJ21195 and MJ21196 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.
BIPOLAR TRANSISTOR, PNP, -250V; Transist; BIPOLAR TRANSISTOR, PNP, -250V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:-16A; DC Current Gain hFE:25; No. of Pins:2
Trans GP BJT PNP 250V 16A 3-Pin(2 Tab) TO-204 Tray - Trays
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
250V 250W 16A PNP TO-204AA Bipolar Transistors - BJT ROHS
MJ Series 250 V 16 A Screw Mount PNP Silicon Power Transistor - TO-204AA
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The MJ21195 and MJ21196 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.
BIPOLAR TRANSISTOR, PNP, -250V; Transist; BIPOLAR TRANSISTOR, PNP, -250V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:-16A; DC Current Gain hFE:25; No. of Pins:2
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