ON Semiconductor MJ21193G
- Part Number:
- MJ21193G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463417-MJ21193G
- Description:
- TRANS PNP 250V 16A TO3
- ECAD Model:
-
- Datasheet:
- MJ21193G
ON Semiconductor MJ21193G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ21193G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time5 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-250V
- Max Power Dissipation250W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Current Rating-16A
- Frequency4MHz
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product4MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current16A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 8A 5V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ21193G Description
MJ21193 (PNP) and MJ21194 (NPN) use punch transmitter technology and are designed for high power audio output, head locators and linear applications.
MJ21193G Features
? Total Harmonic Distortion Characterized ? High DC Current Gain ? Excellent Gain Linearity ? High SOA ? These Devices are Pb?Free and are RoHS Compliant* MJ21193G Applications
high power audio output
head locators linear applications
MJ21193 (PNP) and MJ21194 (NPN) use punch transmitter technology and are designed for high power audio output, head locators and linear applications.
MJ21193G Features
? Total Harmonic Distortion Characterized ? High DC Current Gain ? Excellent Gain Linearity ? High SOA ? These Devices are Pb?Free and are RoHS Compliant* MJ21193G Applications
high power audio output
head locators linear applications
MJ21193G More Descriptions
Bipolar Transistor, PNP, 250 V, 16 A
Bipolar (Bjt) Single Transistor, Audio, Pnp, 250 V, 4 Mhz, 250 W, 16 A, 75 Rohs Compliant: Yes |Onsemi MJ21193G
Trans GP BJT PNP 250V 16A 250000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar,Si,PNP,Power,VCEO 250VDC,IC 16A,PD 250W,TO-204AA (TO-3) | ON Semiconductor MJ21193G
MJ Series 250 V 16 A Screw Mount PNP Silicon Power Transistor - TO-204AA
Bipolar Transistors - BJT 16A 250V 250W PNP
TRANSISTOR, PNP, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 75hFE; Transistor Case Style
The MJ21193 and MJ21194 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.
Bipolar (Bjt) Single Transistor, Audio, Pnp, 250 V, 4 Mhz, 250 W, 16 A, 75 Rohs Compliant: Yes |Onsemi MJ21193G
Trans GP BJT PNP 250V 16A 250000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar,Si,PNP,Power,VCEO 250VDC,IC 16A,PD 250W,TO-204AA (TO-3) | ON Semiconductor MJ21193G
MJ Series 250 V 16 A Screw Mount PNP Silicon Power Transistor - TO-204AA
Bipolar Transistors - BJT 16A 250V 250W PNP
TRANSISTOR, PNP, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 75hFE; Transistor Case Style
The MJ21193 and MJ21194 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.
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