MJ11033G

ON Semiconductor MJ11033G

Part Number:
MJ11033G
Manufacturer:
ON Semiconductor
Ventron No:
2463352-MJ11033G
Description:
TRANS PNP DARL 120V 50A TO3
ECAD Model:
Datasheet:
MJ11033G

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Specifications
ON Semiconductor MJ11033G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11033G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    5 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AE
  • Surface Mount
    NO
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Tray
  • Published
    2002
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -120V
  • Max Power Dissipation
    300W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    50A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    300W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    120V
  • Max Collector Current
    50A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 25A 5V
  • Current - Collector Cutoff (Max)
    2mA
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 500mA, 50A
  • Collector Emitter Breakdown Voltage
    120V
  • Collector Emitter Saturation Voltage
    2.5V
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    50A
  • Height
    8.51mm
  • Length
    38.86mm
  • Width
    26.67mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJ11033G Overview
DC current gain in this device equals 1000 @ 25A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 500mA, 50A.Single BJT transistor is essential to maintain the continuous collector voltage at 50A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50A current rating.In extreme cases, the collector current can be as low as 50A volts.

MJ11033G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A


MJ11033G Applications
There are a lot of ON Semiconductor
MJ11033G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJ11033G More Descriptions
50 A, 120 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
ON Semi PNP Darlington Transistor 50 A 120 V HFE:400 2-Pin TO-204 | ON Semiconductor MJ11033G
Transistor Darlington Pnp 120 Volt 50 Amp 3-Pin 2 Tab TO-204 Tray
MJ Series 120 V 50 A PNP High Current Darlington Silicon Transistor - TO-204
BIPOLAR Transistor, PNP, -120V, TO-204;; TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V;
BIPOLAR TRANSISTOR, PNP, -120V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:300W; DC Collector Current:50A; RF Transistor Case:TO-3; No. of Pins:2Pins; DC Current Gain hFE:18000hFE RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MJ11033G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Series
    Contact Plating
    Weight
    Transition Frequency
    Frequency - Transition
    hFE Min
    View Compare
  • MJ11033G
    MJ11033G
    ACTIVE (Last Updated: 3 days ago)
    5 Weeks
    Through Hole
    TO-204AE
    NO
    2
    SILICON
    -55°C~200°C TJ
    Tray
    2002
    e1
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    Other Transistors
    -120V
    300W
    BOTTOM
    PIN/PEG
    260
    50A
    40
    2
    1
    PNP
    Single
    300W
    COLLECTOR
    AMPLIFIER
    PNP - Darlington
    120V
    50A
    1000 @ 25A 5V
    2mA
    3.5V @ 500mA, 50A
    120V
    2.5V
    120V
    5V
    50A
    8.51mm
    38.86mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • CP547-MJ11015-CT
    -
    -
    Surface Mount
    Die
    -
    -
    -
    -
    Tray
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    Die
    CP547
    -
    -
    -
    -
    -
  • MJ11015G
    ACTIVE (Last Updated: 3 days ago)
    2 Weeks
    Through Hole
    TO-204AA, TO-3
    NO
    2
    SILICON
    -55°C~200°C TJ
    Tray
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    -120V
    200W
    BOTTOM
    PIN/PEG
    260
    -30A
    40
    2
    1
    PNP
    Single
    200W
    COLLECTOR
    AMPLIFIER
    PNP - Darlington
    120V
    30A
    1000 @ 20A 5V
    1mA
    4V @ 300mA, 30A
    120V
    3V
    120V
    5V
    30A
    8.51mm
    39.37mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    Tin
    4.535924g
    4MHz
    4MHz
    1000
  • MJ11032G
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    TO-204AE
    NO
    2
    SILICON
    -55°C~200°C TJ
    Tray
    2002
    e1
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    Other Transistors
    120V
    300W
    BOTTOM
    PIN/PEG
    260
    50A
    40
    2
    1
    NPN
    Single
    300W
    COLLECTOR
    AMPLIFIER
    NPN - Darlington
    120V
    50A
    1000 @ 25A 5V
    2mA
    3.5V @ 500mA, 50A
    120V
    2.5V
    120V
    5V
    50A
    8.51mm
    38.86mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    Copper, Silver, Tin
    -
    -
    -
    1000
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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