ON Semiconductor MJ11033G
- Part Number:
- MJ11033G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463352-MJ11033G
- Description:
- TRANS PNP DARL 120V 50A TO3
- Datasheet:
- MJ11033G
ON Semiconductor MJ11033G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11033G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AE
- Surface MountNO
- Number of Pins2
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTray
- Published2002
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC-120V
- Max Power Dissipation300W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating50A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count2
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation300W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)120V
- Max Collector Current50A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A 5V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
- Collector Emitter Breakdown Voltage120V
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current50A
- Height8.51mm
- Length38.86mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ11033G Overview
DC current gain in this device equals 1000 @ 25A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 500mA, 50A.Single BJT transistor is essential to maintain the continuous collector voltage at 50A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50A current rating.In extreme cases, the collector current can be as low as 50A volts.
MJ11033G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11033G Applications
There are a lot of ON Semiconductor
MJ11033G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 1000 @ 25A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 500mA, 50A.Single BJT transistor is essential to maintain the continuous collector voltage at 50A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50A current rating.In extreme cases, the collector current can be as low as 50A volts.
MJ11033G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11033G Applications
There are a lot of ON Semiconductor
MJ11033G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ11033G More Descriptions
50 A, 120 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
ON Semi PNP Darlington Transistor 50 A 120 V HFE:400 2-Pin TO-204 | ON Semiconductor MJ11033G
Transistor Darlington Pnp 120 Volt 50 Amp 3-Pin 2 Tab TO-204 Tray
MJ Series 120 V 50 A PNP High Current Darlington Silicon Transistor - TO-204
BIPOLAR Transistor, PNP, -120V, TO-204;; TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V;
BIPOLAR TRANSISTOR, PNP, -120V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:300W; DC Collector Current:50A; RF Transistor Case:TO-3; No. of Pins:2Pins; DC Current Gain hFE:18000hFE RoHS Compliant: Yes
Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
ON Semi PNP Darlington Transistor 50 A 120 V HFE:400 2-Pin TO-204 | ON Semiconductor MJ11033G
Transistor Darlington Pnp 120 Volt 50 Amp 3-Pin 2 Tab TO-204 Tray
MJ Series 120 V 50 A PNP High Current Darlington Silicon Transistor - TO-204
BIPOLAR Transistor, PNP, -120V, TO-204;; TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V;
BIPOLAR TRANSISTOR, PNP, -120V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:300W; DC Collector Current:50A; RF Transistor Case:TO-3; No. of Pins:2Pins; DC Current Gain hFE:18000hFE RoHS Compliant: Yes
The three parts on the right have similar specifications to MJ11033G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSeriesContact PlatingWeightTransition FrequencyFrequency - TransitionhFE MinView Compare
-
MJ11033GACTIVE (Last Updated: 3 days ago)5 WeeksThrough HoleTO-204AENO2SILICON-55°C~200°C TJTray2002e1yesActive1 (Unlimited)2EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors-120V300WBOTTOMPIN/PEG26050A4021PNPSingle300WCOLLECTORAMPLIFIERPNP - Darlington120V50A1000 @ 25A 5V2mA3.5V @ 500mA, 50A120V2.5V120V5V50A8.51mm38.86mm26.67mmNo SVHCNoROHS3 CompliantLead Free--------
-
--Surface MountDie----Tray---Obsolete1 (Unlimited)----------------------------------Non-RoHS Compliant-DieCP547-----
-
ACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleTO-204AA, TO-3NO2SILICON-55°C~200°C TJTray2008e3yesActive1 (Unlimited)2EAR99-Other Transistors-120V200WBOTTOMPIN/PEG260-30A4021PNPSingle200WCOLLECTORAMPLIFIERPNP - Darlington120V30A1000 @ 20A 5V1mA4V @ 300mA, 30A120V3V120V5V30A8.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free--Tin4.535924g4MHz4MHz1000
-
ACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleTO-204AENO2SILICON-55°C~200°C TJTray2002e1yesActive1 (Unlimited)2EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors120V300WBOTTOMPIN/PEG26050A4021NPNSingle300WCOLLECTORAMPLIFIERNPN - Darlington120V50A1000 @ 25A 5V2mA3.5V @ 500mA, 50A120V2.5V120V5V50A8.51mm38.86mm26.67mmNo SVHCNoROHS3 CompliantLead Free--Copper, Silver, Tin---1000
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
31 October 2023
STM32F407VET6 Microcontroller: Symbol, Features, Working Principle
Ⅰ. What is STM32F407VET6 microcontroller?Ⅱ. Symbol, footprint and pin configuration of STM32F407VET6 microcontrollerⅢ. Technical parameters of STM32F407VET6 microcontrollerⅣ. Features of STM32F407VET6 microcontrollerⅤ. Dimension and package of STM32F407VET6 microcontrollerⅥ.... -
01 November 2023
Power MOSFET IRFP460: Manufacturer, Technical Parameters and Applications
Ⅰ. Overview of IRFP460Ⅱ. Manufacturer of IRFP460Ⅲ. Symbol, footprint and pin configuration of IRFP460Ⅳ. What are the features of IRFP460?Ⅴ. Technical parameters of IRFP460Ⅵ. What are the parallel... -
01 November 2023
Do You Know the CD4046BE CMOS Micropower Phase Locked Loop?
Ⅰ. What is a phase locked loop?Ⅱ. Overview of CD4046BEⅢ. Symbol, footprint and pin configuration of CD4046BEⅣ. What are the features of CD4046BE?Ⅴ. Technical parameters of CD4046BEⅥ. How... -
02 November 2023
MPX2010DP Pressure Sensor: Manufacturer, Pin Configuration, and Applications
Ⅰ. What is a pressure sensor?Ⅱ. Overview of MPX2010DP pressure sensorⅢ. Manufacturer of MPX2010DP pressure sensorⅣ. MPX2010DP symbol, footprint and pin configurationⅤ. Features of MPX2010DP pressure sensorⅥ. Technical...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.