Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11022
MJ11022

ON Semiconductor MJ11022

Part Number:
MJ11022
Manufacturer:
ON Semiconductor
Ventron No:
2468213-MJ11022
Description:
TRANS NPN DARL 250V 15A TO-3
ECAD Model:
Datasheet:
MJ11022

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor MJ11022 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11022.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    250V
  • Max Power Dissipation
    175W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Current Rating
    15A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Configuration
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    3.4V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    400 @ 10A 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3.4V @ 150mA, 15A
  • Collector Emitter Breakdown Voltage
    250V
  • Transition Frequency
    3MHz
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJ11022 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 10A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.4V @ 150mA, 15A.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 15A volts at its maximum.

MJ11022 Features
the DC current gain for this device is 400 @ 10A 5V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the current rating of this device is 15A
a transition frequency of 3MHz


MJ11022 Applications
There are a lot of ON Semiconductor
MJ11022 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJ11022 More Descriptions
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
TRANS NPN DARL 250V 15A TO204
Product Comparison
The three parts on the right have similar specifications to MJ11022.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Configuration
    Case Connection
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    RoHS Status
    Lead Free
    Supplier Device Package
    Series
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Weight
    Element Configuration
    Power Dissipation
    Collector Emitter Saturation Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • MJ11022
    MJ11022
    ON Semiconductor
    Through Hole
    TO-204AA, TO-3
    NO
    2
    SILICON
    -65°C~200°C TJ
    Tray
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    250V
    175W
    BOTTOM
    PIN/PEG
    260
    not_compliant
    15A
    40
    2
    Not Qualified
    1
    NPN
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    COLLECTOR
    SWITCHING
    NPN - Darlington
    3.4V
    15A
    400 @ 10A 5V
    1mA
    3.4V @ 150mA, 15A
    250V
    3MHz
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CP547-MJ11015-CT
    CP547-MJ11015-CT
    Central Semiconductor Corp
    Surface Mount
    Die
    -
    -
    -
    -
    Tray
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    Die
    CP547
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJ11022 vs CP547-MJ11015-CT
  • MJ11015G
    MJ11015G
    ON Semiconductor
    Through Hole
    TO-204AA, TO-3
    NO
    2
    SILICON
    -55°C~200°C TJ
    Tray
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    -120V
    200W
    BOTTOM
    PIN/PEG
    260
    -
    -30A
    40
    2
    -
    1
    PNP
    -
    COLLECTOR
    AMPLIFIER
    PNP - Darlington
    120V
    30A
    1000 @ 20A 5V
    1mA
    4V @ 300mA, 30A
    120V
    4MHz
    ROHS3 Compliant
    Lead Free
    -
    -
    ACTIVE (Last Updated: 3 days ago)
    2 Weeks
    Tin
    4.535924g
    Single
    200W
    3V
    4MHz
    120V
    5V
    1000
    30A
    8.51mm
    39.37mm
    26.67mm
    No SVHC
    No
    MJ11022 vs MJ11015G
  • MJ11032G
    MJ11032G
    ON Semiconductor
    Through Hole
    TO-204AE
    NO
    2
    SILICON
    -55°C~200°C TJ
    Tray
    2002
    e1
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    Other Transistors
    120V
    300W
    BOTTOM
    PIN/PEG
    260
    -
    50A
    40
    2
    -
    1
    NPN
    -
    COLLECTOR
    AMPLIFIER
    NPN - Darlington
    120V
    50A
    1000 @ 25A 5V
    2mA
    3.5V @ 500mA, 50A
    120V
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Copper, Silver, Tin
    -
    Single
    300W
    2.5V
    -
    120V
    5V
    1000
    50A
    8.51mm
    38.86mm
    26.67mm
    No SVHC
    No
    MJ11022 vs MJ11032G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for MJ11022
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.