ON Semiconductor MJ11021G
- Part Number:
- MJ11021G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465265-MJ11021G
- Description:
- TRANS PNP DARL 250V 15A TO-3
- Datasheet:
- MJ11021G
ON Semiconductor MJ11021G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11021G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight6.40101g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-250V
- Max Power Dissipation175W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating-15A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count2
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation150W
- Case ConnectionCOLLECTOR
- Power - Max175W
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 10A 5V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3.4V @ 150mA, 15A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency6MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)250V
- Emitter Base Voltage (VEBO)50V
- hFE Min100
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ11021G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 10A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.4V @ 150mA, 15A.If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.A transition frequency of 6MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
MJ11021G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is -15A
a transition frequency of 6MHz
MJ11021G Applications
There are a lot of ON Semiconductor
MJ11021G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 10A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.4V @ 150mA, 15A.If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.A transition frequency of 6MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
MJ11021G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is -15A
a transition frequency of 6MHz
MJ11021G Applications
There are a lot of ON Semiconductor
MJ11021G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ11021G More Descriptions
15 A, 250 V PNP Darlington Bipolar Power Transistor
MJ11021 Series 250 V 15 A PNP Silicon Darlington Transistor - TO-3
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Trans Darlington PNP 250V 15A 175000mW 3-Pin(2 Tab) TO-3 Tray
TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: -; Power Dissipation Pd: 150W; DC Collector Current: 15A; DC Current Gain hFE: 15hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2V; Hfe Min: 0.4; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 175°C
MJ11021 Series 250 V 15 A PNP Silicon Darlington Transistor - TO-3
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Trans Darlington PNP 250V 15A 175000mW 3-Pin(2 Tab) TO-3 Tray
TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: -; Power Dissipation Pd: 150W; DC Collector Current: 15A; DC Current Gain hFE: 15hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2V; Hfe Min: 0.4; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 175°C
The three parts on the right have similar specifications to MJ11021G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSeriesContact PlatingFrequency - TransitionContinuous Collector CurrentView Compare
-
MJ11021GACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleTO-204AA, TO-3NO26.40101gSILICON-65°C~200°C TJTray2005e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors-250V175WBOTTOMPIN/PEG260-15A4021PNPSingle150WCOLLECTOR175WSWITCHINGPNP - Darlington250V15A400 @ 10A 5V1mA3.4V @ 150mA, 15A250V6MHz2V250V50V1008.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free------
-
--Surface MountDie-----Tray---Obsolete1 (Unlimited)------------------------------------Non-RoHS Compliant-DieCP547---
-
ACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-55°C~200°C TJTray2008e3yesActive1 (Unlimited)2EAR99-Other Transistors-120V200WBOTTOMPIN/PEG260-30A4021PNPSingle200WCOLLECTOR-AMPLIFIERPNP - Darlington120V30A1000 @ 20A 5V1mA4V @ 300mA, 30A120V4MHz3V120V5V10008.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free--Tin4MHz30A
-
ACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleTO-204AENO2-SILICON-55°C~200°C TJTray2002e1yesActive1 (Unlimited)2EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors120V300WBOTTOMPIN/PEG26050A4021NPNSingle300WCOLLECTOR-AMPLIFIERNPN - Darlington120V50A1000 @ 25A 5V2mA3.5V @ 500mA, 50A120V-2.5V120V5V10008.51mm38.86mm26.67mmNo SVHCNoROHS3 CompliantLead Free--Copper, Silver, Tin-50A
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
04 March 2024
NCP1377BDR2G Symbol, Operating Principle, Technical Parameters and More
Ⅰ. NCP1377BDR2G overviewⅡ. Symbol, footprint and pin configuration of NCP1377BDR2GⅢ. Operating principle of NCP1377BDR2GⅣ. Internal circuit architecture of NCP1377BDR2GⅤ. Precautions for the use of NCP1377BDR2GⅥ. Technical parameters of... -
04 March 2024
ADS1248IPWR Specifications, Characteristics, Applications and Market Trends
Ⅰ. Introduction to ADS1248IPWRⅡ. Specifications of ADS1248IPWRⅢ. Functional block diagram of ADS1248IPWRⅣ. Characteristics of ADS1248IPWRⅤ. Where is ADS1248IPWR used?Ⅵ. Absolute maximum ratings of ADS1248IPWRⅦ. Market trends of ADS1248IPWRⅧ.... -
05 March 2024
KA7500B: Efficient and Stable PWM Switching Regulator Controller
Ⅰ. What is KA7500B?Ⅱ. Characteristics of KA7500BⅢ. KA7500B working parts and principleⅣ. Internal block diagram of KA7500BⅤ. Applications of KA7500BⅥ. Can KA7500B and KA7500BD be replaced?Ⅶ. How to... -
05 March 2024
STM8S207CBT6 Microcontroller Functions, Specifications, Operating Principle and Package
Ⅰ. STM8S207CBT6 overviewⅡ. Functions of STM8S207CBT6Ⅲ. STM8S207CBT6 specificationsⅣ. STM8S207CBT6 structure and operating principleⅤ. Package and dimensions of STM8S207CBT6Ⅵ. Four low-power modes of STM8S207CBT6 microcontrollerⅦ. Application areas of STM8S207CBT6Ⅰ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.