ON Semiconductor MJ11012G

Name: MJ11012G
Brand: ON Semiconductor
SKU: 2463388-MJ11012G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJ11012G

Manufacturer:: ON Semiconductor

Ventron No:: 2463388-MJ11012G

Description:: TRANS NPN DARL 60V 30A TO-3

ECAD Model:

Datasheet:: MJ11012G

Specifications

ON Semiconductor MJ11012G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11012G.

Lifecycle Status
ACTIVE (Last Updated: 21 hours ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tray
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
200W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
30A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
2
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
200W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
30A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
4V
Frequency - Transition
4MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
30A
Height
26.67mm
Length
39.37mm
Width
8.509mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJ11012G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.

MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz

MJ11012G Applications
There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJ11012G More Descriptions

30 A, 60 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 60 V 30 A NPN High Current Darlington Silicon Transistor - TO-204AA
Trans Darlington NPN 60V 30A 200000mW 3-Pin(2 Tab) TO-3 Tray
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 200W; DC Collector Current: 30A; DC Current Gain hFE: 1000hFE; Transistor Case Style: TO-204AA; No

Product Comparison

The three parts on the right have similar specifications to MJ11012G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Series

Contact Plating

hFE Min

View Compare
MJ11012G

ON Semiconductor

ACTIVE (Last Updated: 21 hours ago)

2 Weeks

Through Hole

TO-204AA, TO-3

NO

2

4.535924g

SILICON

-55°C~200°C TJ

Tray

2008

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

Other Transistors

60V

200W

BOTTOM

PIN/PEG

260

30A

40

2

1

NPN

Single

200W

COLLECTOR

AMPLIFIER

NPN - Darlington

60V

30A

1000 @ 20A 5V

1mA

4V @ 300mA, 30A

60V

4MHz

4V

4MHz

60V

5V

30A

26.67mm

39.37mm

8.509mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
CP547-MJ11015-CT

Central Semiconductor Corp

-

-

Surface Mount

Die

-

-

-

-

-

Tray

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

Die

CP547

-

-

MJ11012G vs CP547-MJ11015-CT
MJ11015G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

2 Weeks

Through Hole

TO-204AA, TO-3

NO

2

4.535924g

SILICON

-55°C~200°C TJ

Tray

2008

e3

yes

Active

1 (Unlimited)

2

EAR99

-

Other Transistors

-120V

200W

BOTTOM

PIN/PEG

260

-30A

40

2

1

PNP

Single

200W

COLLECTOR

AMPLIFIER

PNP - Darlington

120V

30A

1000 @ 20A 5V

1mA

4V @ 300mA, 30A

120V

4MHz

3V

4MHz

120V

5V

30A

8.51mm

39.37mm

26.67mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

Tin

1000

MJ11012G vs MJ11015G
MJ11032G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

4 Weeks

Through Hole

TO-204AE

NO

2

-

SILICON

-55°C~200°C TJ

Tray

2002

e1

yes

Active

1 (Unlimited)

2

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

Other Transistors

120V

300W

BOTTOM

PIN/PEG

260

50A

40

2

1

NPN

Single

300W

COLLECTOR

AMPLIFIER

NPN - Darlington

120V

50A

1000 @ 25A 5V

2mA

3.5V @ 500mA, 50A

120V

-

2.5V

-

120V

5V

50A

8.51mm

38.86mm

26.67mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

Copper, Silver, Tin

1000

MJ11012G vs MJ11032G

Certification

Related parts for MJ11012G

MJ11028G

ON Semiconductor

TRANS NPN DARL 60V 50A TO3
CP547-MJ11015-CT

Central Semiconductor Corp

TRANS PNP DARL 30A 120V DIE
MJ11015G

ON Semiconductor

TRANS PNP DARL 120V 30A TO3
MJ11032G

ON Semiconductor

TRANS NPN DARL 120V 50A TO3

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MJ11012G Specification

Part Number	Manufacturers	Description	Stock	Price
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-3 Tra RoHS: Compliant	114	1 $4.7859 10 $4.133 100 $3.619 200 $1.865 500 $1.678 1000 $1.665
MJ11012G DISTI #MJ11012G	ON Semiconductor	TRANS NPN DARL 60V 30A TO-3 RoHS: Compliant	81	1 $5.69 10 $5.106 100 $4.1835 500 $3.5613 1000 $3.0035
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-3 Tra RoHS: Compliant	200	100 $3.2
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-3 Tra RoHS: Compliant	200	300 $2.5929
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-3 Tra RoHS: Compliant	114	4 $3.957 10 $3.6 100 $3.015
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-204 T RoHS: Compliant	198	300 $2.69 302 $2.69 602 $2.69 1500 $2.49 3000 $2.49
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-204 T RoHS: Compliant	0	1 $3.59 10 $2.89 25 $2.89 50 $2.69 100 $2.69 500 $2.59 1000 $2.49
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-204 T RoHS: Compliant	0	1 $5.41 10 $4.6 25 $4.4 50 $4.19 100 $3.99 250 $3.79 500 $3.4
MJ11012G DISTI #MJ11012G	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 60V TO-204, Transistor P	42	1 $5.41 10 $4.6 25 $4.4 50 $4.19 100 $3.99 250 $3.79 500 $3.4
MJ11012G DISTI #MJ11012G	ON Semiconductor	ON Semi MJ11012G Dual NPN Darlington Transistor, RoHS: Compliant	0	1 $4.48 100 $4.26 250 $4.05
MJ11012G DISTI #MJ11012G	ON Semiconductor	Darlington Transistors 30A 60V Bipolar Power NPN RoHS: Compliant	196	1 $5.41 10 $4.6 100 $3.99 200 $3.79 500 $3.4 1000 $2.87 2000 $2.72
MJ11012 DISTI #MJ11012	ON Semiconductor	Darlington Transistors 30A 60V Bipolar RoHS: Not Compliant	0
MJ11012G DISTI #MJ11012G	ON Semiconductor	MJ Series 60 V 30 A NPN High Current Darlington Si RoHS: Compliant	344	5 $4.15 25 $3.23 50 $3.06 100 $2.9 250 $2.7
MJ11012G DISTI #MJ11012G	ON Semiconductor	RoHS: Not Compliant	969	1 $3.68 25 $3.41 100 $3.27 500 $3.14 1000 $2.99
MJ11012G DISTI #MJ11012G	ON Semiconductor	BJT NPN DARLINGTON 30A 60V TO-204-2, PK	40	2 $3.29 10 $2.96 20 $2.87 50 $2.78 100 $2.42
MJ11012G DISTI #MJ11012G		RoHS: Compliant	232	100 $5.53 232 $5.19
MJ11012G DISTI #MJ11012G	ON Semiconductor	TRANSISTOR RoHS: Compliant	237	1 $4.6 10 $3.49 100 $3.02 250 $2.99 500 $2.97
MJ11012G DISTI #MJ11012G	ON Semiconductor	TRANSISTOR RoHS: Compliant	237	1 $8.56 10 $7.28 100 $6.32 200 $6 500 $5.38 1000 $4.55 2000 $4.31
MJ11012G DISTI #MJ11012G	ON Semiconductor	Trans Darlington NPN 60V 30A 200000mW 3-Pin(2 Tab) RoHS: Compliant	114	1 $3.957 10 $3.6 100 $3.015

MJ11012~~(2)~~
MJ1101~~(21)~~
MJ110~~(46)~~
MJ11~~(60)~~
MJ1~~(65)~~

ON Semiconductor MJ11012G

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