Fairchild/ON Semiconductor KST4401MTF
- Part Number:
- KST4401MTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464174-KST4401MTF
- Description:
- TRANS NPN 40V 0.6A SOT-23
- Datasheet:
- KST4401MTF
Fairchild/ON Semiconductor KST4401MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KST4401MTF.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating600mA
- Frequency250MHz
- Base Part NumberKST4401
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 1V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)255ns
- Height970μm
- Length2.9mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KST4401MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST4401MTF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
KST4401MTF Applications
There are a lot of ON Semiconductor
KST4401MTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST4401MTF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
KST4401MTF Applications
There are a lot of ON Semiconductor
KST4401MTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KST4401MTF More Descriptions
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R - Tape and Reel
The three parts on the right have similar specifications to KST4401MTF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeCurrent - Collector Cutoff (Max)Surface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KST4401MTFLAST SHIPMENTS (Last Updated: 1 day ago)6 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICONTape & Reel (TR)2002e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)150°COther Transistors40V350mWDUALGULL WING600mA250MHzKST44011Single350mWSWITCHING250MHzNPNNPN40V600mA100 @ 150mA 1V750mV @ 50mA, 500mA40V250MHz750mV40V60V6V100255ns970μm2.9mm1.3mmNoROHS3 CompliantLead Free-------------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33--Tape & Reel (TR)---Obsolete1 (Unlimited)---150°C-30V350mW--200mA250MHz-1Single350mW-250MHz-NPN30V200mA50 @ 2mA 1V300mV @ 5mA, 50mA30V---40V5V50----NoRoHS CompliantLead Free50nA ICBO-----------
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LAST SHIPMENTS (Last Updated: 1 week ago)13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICONTape & Reel (TR)2002e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)150°COther Transistors-40V350mWDUALGULL WING-600mA200MHzKST44031Single350mWSWITCHING200MHzPNPPNP40V600mA100 @ 150mA 2V750mV @ 50mA, 500mA40V200MHz-750mV40V-40V-5V100255ns970μm2.9mm1.3mmNoRoHS CompliantLead Free------------
-
---Surface MountTO-236-3, SC-59, SOT-23-3--SILICONTape & Reel (TR)-e3yesObsolete1 (Unlimited)3-MATTE TIN----DUALGULL WING---1----PNPPNP--120 @ 2mA 1V400mV @ 5mA, 50mA-250MHz----------ROHS3 Compliant-50nA ICBOYES260unknownNOT SPECIFIEDR-PDSO-G3COMMERCIALSINGLE350mW25V200mA250MHz
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