Fairchild/ON Semiconductor KST42MTF
- Part Number:
- KST42MTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585105-KST42MTF
- Description:
- TRANS NPN 300V 0.5A SOT23
- Datasheet:
- KST42MTF
Fairchild/ON Semiconductor KST42MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KST42MTF.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Factory Lead Time27 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating500mA
- Frequency50MHz
- Base Part NumberKST42
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- Max Junction Temperature (Tj)150°C
- Height1.2mm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KST42MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KST42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KST42MTF Applications
There are a lot of ON Semiconductor
KST42MTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KST42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KST42MTF Applications
There are a lot of ON Semiconductor
KST42MTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KST42MTF More Descriptions
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
KST42 Series 300 V 500 mA SMT NPN Epitaxial Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 300V 0.5A 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR, NPN, 300V, SOT-23
KST42 Series 300 V 500 mA SMT NPN Epitaxial Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 300V 0.5A 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR, NPN, 300V, SOT-23
The three parts on the right have similar specifications to KST42MTF.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureTransistor ApplicationTurn Off Time-Max (toff)Surface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KST42MTFLAST SHIPMENTS (Last Updated: 1 day ago)27 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2002e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors300V350mWDUALGULL WING500mA50MHzKST421Single350mW50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V25150°C1.2mm2.92mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33---Tape & Reel (TR)---Obsolete1 (Unlimited)----30V350mW--200mA250MHz-1Single350mW250MHz-NPN30V200mA50 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA30V---40V5V50-----NoRoHS CompliantLead Free150°C-------------
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LAST SHIPMENTS (Last Updated: 1 week ago)13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-Tape & Reel (TR)2002e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-40V350mWDUALGULL WING-600mA200MHzKST44031Single350mW200MHzPNPPNP40V600mA100 @ 150mA 2V-750mV @ 50mA, 500mA40V200MHz-750mV40V-40V-5V100-970μm2.9mm1.3mm-NoRoHS CompliantLead Free150°CSWITCHING255ns-----------
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---Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)3-MATTE TIN---DUALGULL WING---1---PNPPNP--120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA-250MHz-----------ROHS3 Compliant----YES260unknownNOT SPECIFIEDR-PDSO-G3COMMERCIALSINGLE350mW25V200mA250MHz
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