Fairchild/ON Semiconductor KSP92TA
- Part Number:
- KSP92TA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464233-KSP92TA
- Description:
- TRANS PNP 300V 0.5A TO-92
- Datasheet:
- KSP92TA
Fairchild/ON Semiconductor KSP92TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP92TA.
- Lifecycle StatusACTIVE (Last Updated: 22 hours ago)
- Factory Lead Time6 Weeks
- MountSurface Mount, Through Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240.007063mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating-500mA
- Frequency50MHz
- Base Part NumberKSP92
- Number of Elements1
- Voltage300V
- Element ConfigurationSingle
- Current500mA
- Power Dissipation625mW
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)-5V
- hFE Min40
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSP92TA Description
The ON Semiconductor KSP92TA is an -300V PNP silicon small signal Bipolar Transistor designed for general purpose amplifier applications.
KSP92TA Features
83.3??C/W Thermal resistance, junction to case
200??C/W Thermal resistance, junction to ambient
-300VDC Collector to base voltage (VCBO)
-5VDC Emitter to base voltage (VEBO)
KSP92TA Applications
Industrial
The ON Semiconductor KSP92TA is an -300V PNP silicon small signal Bipolar Transistor designed for general purpose amplifier applications.
KSP92TA Features
83.3??C/W Thermal resistance, junction to case
200??C/W Thermal resistance, junction to ambient
-300VDC Collector to base voltage (VCBO)
-5VDC Emitter to base voltage (VEBO)
KSP92TA Applications
Industrial
KSP92TA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSP92 Series 300 V CE Breakdown 0.5 A PNP Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 Ammo - Ammo Pack
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
250nA 300V 625mW 500mA 25@30mA10V 50MHz 500mV@20mA2mA PNP 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
KSP92 Series 300 V CE Breakdown 0.5 A PNP Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 Ammo - Ammo Pack
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
250nA 300V 625mW 500mA 25@30mA10V 50MHz 500mV@20mA2mA PNP 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to KSP92TA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KSP92TAACTIVE (Last Updated: 22 hours ago)6 WeeksSurface Mount, Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240.007063mgSILICON150°C TJTape & Box (TB)2002e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V625mWBOTTOM-500mA50MHzKSP921300VSingle500mA625mW50MHzPNPPNP300V500mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV30V300V-5V404.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead Free------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Box (TB)---Obsolete1 (Unlimited)-----------------PNP--25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA--------------TO-92-3625mW200V500mA50MHz
-
LAST SHIPMENTS (Last Updated: 23 hours ago)7 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICON150°C TJBulk2007e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-400V625mWBOTTOM-300mA-KSP941-Single-625mW-PNPPNP400V300mA50 @ 10mA 10V1μA750mV @ 5mA, 50mA400V--750mV--400V-6V504.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead Free-----
-
ACTIVE (Last Updated: 22 hours ago)7 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICON150°C TJBulk2002e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V625mWBOTTOM-500mA50MHzKSP921-Single-625mW50MHzPNPPNP300V500mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV--300V-5V40----NoROHS3 CompliantLead Free-----
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