Fairchild/ON Semiconductor KSP14TA
- Part Number:
- KSP14TA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585571-KSP14TA
- Description:
- TRANS NPN DARL 30V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- KSP14TA
Fairchild/ON Semiconductor KSP14TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP14TA.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- Power - Max625mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency125MHz
- Frequency - Transition125MHz
- RoHS StatusROHS3 Compliant
KSP14TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.The part has a transition frequency of 125MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
KSP14TA Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
KSP14TA Applications
There are a lot of Rochester Electronics, LLC
KSP14TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.The part has a transition frequency of 125MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
KSP14TA Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
KSP14TA Applications
There are a lot of Rochester Electronics, LLC
KSP14TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSP14TA More Descriptions
Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92-3
Darlington Transistors NPN Si Transistor Epitaxial Darlington
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Darlington Transistors NPN Si Transistor Epitaxial Darlington
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to KSP14TA.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusSupplier Device PackageLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPolarityElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningLead FreeView Compare
-
KSP14TAThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)e3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLENOT APPLICABLEO-PBCY-T3COMMERCIAL1625mWNPNNPN - Darlington20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V500mA125MHz125MHzROHS3 Compliant---------------------------- -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJBulk--Obsolete1 (Unlimited)--------625mW-NPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V----TO-92-3--------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulk--Obsolete1 (Unlimited)--------625mW-NPN - Darlington20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V500mA-125MHz----------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)-SILICON150°C TJBulke3yesActive1 (Unlimited)3Tin (Sn)BOTTOM----1--NPN - Darlington10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA--125MHz125MHzROHS3 Compliant-ACTIVE (Last Updated: 12 hours ago)6 WeeksThrough Hole3179mg2002EAR99Other Transistors30V625mW500mAKSP13NPNSingle30V500mA30V1.5V30V10V100004.58mm4.58mm3.86mmNoLead Free
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