Fairchild/ON Semiconductor KSP13BU
- Part Number:
- KSP13BU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462944-KSP13BU
- Description:
- TRANS NPN DARL 30V 0.5A TO-92
- Datasheet:
- KSP13BU
Fairchild/ON Semiconductor KSP13BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP13BU.
- Lifecycle StatusACTIVE (Last Updated: 12 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight179mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating500mA
- Base Part NumberKSP13
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min10000
- Height4.58mm
- Length4.58mm
- Width3.86mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSP13BU Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 500mA volts.
KSP13BU Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
KSP13BU Applications
There are a lot of ON Semiconductor
KSP13BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 500mA volts.
KSP13BU Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
KSP13BU Applications
There are a lot of ON Semiconductor
KSP13BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSP13BU More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92
500 mA, 30 V NPN Darlington Bipolar Junction Transistor
Darlington Transistors NPN Si Transistor Epitaxial Darlington
Transistor, NPN, 30V, 0.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power
TRANSISTOR, NPN, 30V, 0.5A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
500 mA, 30 V NPN Darlington Bipolar Junction Transistor
Darlington Transistors NPN Si Transistor Epitaxial Darlington
Transistor, NPN, 30V, 0.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power
TRANSISTOR, NPN, 30V, 0.5A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to KSP13BU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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KSP13BUACTIVE (Last Updated: 12 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICON150°C TJBulk2002e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors30V625mWBOTTOM500mAKSP131NPNSingleNPN - Darlington30V500mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V125MHz30V10V100004.58mm4.58mm3.86mmNoROHS3 CompliantLead Free-----
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)------------NPN - Darlington--10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA---125MHz-------ROHS3 Compliant-TO-92-3625mW30V500mA
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJBulk---Obsolete1 (Unlimited)------------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA-------------TO-92-3625mW20V-
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk---Obsolete1 (Unlimited)------------NPN - Darlington--20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA---125MHz----------625mW30V500mA
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