Microsemi Corporation JANTXV2N6286

Name: JANTXV2N6286
Brand: Microsemi Corporation
SKU: 2466518-JANTXV2N6286
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N6286

Manufacturer:: Microsemi Corporation

Ventron No:: 2466518-JANTXV2N6286

Description:: TRANS PNP DARL 80V 20A TO3

ECAD Model:

Datasheet:: JANTXV2N6286

Specifications

Microsemi Corporation JANTXV2N6286 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N6286.

Factory Lead Time
20 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-204AA (TO-3)
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/505
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power - Max
175W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
80V
DC Current Gain (hFE) (Min) @ Ic, Vce
1250 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 200mA, 20A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
20A
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N6286 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1250 @ 10A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 200mA, 20A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.TO-204AA (TO-3) is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.

JANTXV2N6286 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
the supplier device package of TO-204AA (TO-3)

JANTXV2N6286 Applications
There are a lot of Microsemi Corporation
JANTXV2N6286 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTXV2N6286 More Descriptions

Trans GP BJT PNP -80V -20A 2-Pin TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTXV2N6286
Trans Darlington PNP 80V 20A 3-Pin(2 Tab) TO-3
TRANS PNP DARL 80V 20A TO204AA

Certification