JANTXV2N2222AUA

Microsemi Corporation JANTXV2N2222AUA

Part Number:
JANTXV2N2222AUA
Manufacturer:
Microsemi Corporation
Ventron No:
2465230-JANTXV2N2222AUA
Description:
TRANS NPN 50V 0.8A
ECAD Model:
Datasheet:
MIL-PRF-19500/255A w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANTXV2N2222AUA technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2222AUA.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, No Lead
  • Number of Pins
    4
  • Supplier Device Package
    4-SMD
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/255
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    NPN
  • Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    800mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    50V
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Current - Collector (Ic) (Max)
    800mA
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV2N2222AUA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Supplier package 4-SMD contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts can be achieved.

JANTXV2N2222AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 4-SMD


JANTXV2N2222AUA Applications
There are a lot of Microsemi Corporation
JANTXV2N2222AUA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N2222AUA More Descriptions
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin UA Waffle
Non-Compliant Surface Mount NPN SMD/SMT 4 Production (Last Updated: 2 months ago) 500 mW 1
Small-Signal BJT _ UA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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