Microsemi Corporation JANTXV2N2219A
- Part Number:
- JANTXV2N2219A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466328-JANTXV2N2219A
- Description:
- TRANS NPN 50V 0.8A
- ECAD Model:
-
- Datasheet:
- JANTXV2N2219A
Microsemi Corporation JANTXV2N2219A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2219A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-205AD
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/251
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-55°C
- Max Power Dissipation800mW
- Number of Elements1
- PolarityNPN
- Power Dissipation800mW
- Power - Max800mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N2219A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.This product comes in a TO-205AD device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
JANTXV2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-205AD
JANTXV2N2219A Applications
There are a lot of Microsemi Corporation
JANTXV2N2219A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.This product comes in a TO-205AD device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
JANTXV2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-205AD
JANTXV2N2219A Applications
There are a lot of Microsemi Corporation
JANTXV2N2219A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2219A More Descriptions
Bipolar Transistors - BJT BJTs, Through Hole - TO-39-3, Single configuration.
Small-Signal BJT _ TO-39
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
JANTXV2N2219A --
Small-Signal BJT _ TO-39
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
JANTXV2N2219A --
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