JANTX2N5153

Aeroflex Metelics, Division of MACOM JANTX2N5153

Part Number:
JANTX2N5153
Manufacturer:
Aeroflex Metelics, Division of MACOM
Ventron No:
2463339-JANTX2N5153
Description:
DIODE
ECAD Model:
Datasheet:
JANTX2N5153

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Aeroflex Metelics, Division of MACOM JANTX2N5153 technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTX2N5153.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/545
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    4
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 2.5A 5V
  • Current - Collector Cutoff (Max)
    50μA
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 500mA, 5A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    70MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5.5V
  • Turn On Time-Max (ton)
    500ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N5153 Overview
This device has a DC current gain of 70 @ 2.5A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5.5V to achieve high efficiency.In this part, there is a transition frequency of 70MHz.The maximum collector current is 2A volts.

JANTX2N5153 Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz


JANTX2N5153 Applications
There are a lot of Microsemi Corporation
JANTX2N5153 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N5153 More Descriptions
Bipolar (BJT) Transistor PNP 80V 2A 1W Through Hole TO-39
Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N5153
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.