Microsemi Corporation JANTX2N2905A
- Part Number:
- JANTX2N2905A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466406-JANTX2N2905A
- Description:
- TRANS PNP 60V 0.6A
- ECAD Model:
-
- Datasheet:
- JANTX2N2905A
Microsemi Corporation JANTX2N2905A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2905A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/290
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation600mW
- Case ConnectionCOLLECTOR
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N2905A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.
JANTX2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N2905A Applications
There are a lot of Microsemi Corporation
JANTX2N2905A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.
JANTX2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N2905A Applications
There are a lot of Microsemi Corporation
JANTX2N2905A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2905A More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
2N2905A Series 60 V 600 mA Through Hole PNP Switching Transistor - TO-39-3
PNP SWITCHING SILICON TRANSISTOR | TRANS PNP 60V 0.6A / Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag
2N2905A Series 60 V 600 mA Through Hole PNP Switching Transistor - TO-39-3
PNP SWITCHING SILICON TRANSISTOR | TRANS PNP 60V 0.6A / Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag
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