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JAN2N918

Microsemi Corporation JAN2N918

Part Number:
JAN2N918
Manufacturer:
Microsemi Corporation
Ventron No:
3069105-JAN2N918
Description:
TRANS NPN 15V 0.05A TO72
ECAD Model:
Datasheet:
JAN2N918

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Specifications
Microsemi Corporation JAN2N918 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N918.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-72-3 Metal Can
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/301
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.21.00.95
  • Max Power Dissipation
    200mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • Reference Standard
    MIL-19500/301H
  • JESD-30 Code
    O-MBCY-W4
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    15V
  • Max Collector Current
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 3mA 1V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 1mA, 10mA
  • Current - Collector (Ic) (Max)
    50mA
  • Collector Base Voltage (VCBO)
    30V
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Collector-Base Capacitance-Max
    3pF
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N918 Overview
This device has a DC current gain of 20 @ 3mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 50mA volts.

JAN2N918 Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA


JAN2N918 Applications
There are a lot of Microsemi Corporation
JAN2N918 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N918 More Descriptions
Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag
JAN Series 15 V 50 mA Through Hole NPN Low Power Silicon Transistor - TO-72-3
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72
Product Comparison
The three parts on the right have similar specifications to JAN2N918.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Reference Standard
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Current - Collector (Ic) (Max)
    Collector Base Voltage (VCBO)
    Highest Frequency Band
    Collector-Base Capacitance-Max
    RoHS Status
    Surface Mount
    Subcategory
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Transition Frequency
    Power Dissipation-Max (Abs)
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Collector Emitter Breakdown Voltage
    Radiation Hardening
    View Compare
  • JAN2N918
    JAN2N918
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-72-3 Metal Can
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/301
    2007
    e0
    no
    Discontinued
    1 (Unlimited)
    4
    EAR99
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    200mW
    BOTTOM
    WIRE
    NOT SPECIFIED
    NOT SPECIFIED
    4
    MIL-19500/301H
    O-MBCY-W4
    Qualified
    1
    SINGLE
    NPN
    NPN
    15V
    50mA
    20 @ 3mA 1V
    1μA ICBO
    400mV @ 1mA, 10mA
    50mA
    30V
    ULTRA HIGH FREQUENCY B
    3pF
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N4237
    JAN2N4237
    Microsemi Corporation
    -
    22 Weeks
    -
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/581
    2002
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    -
    BOTTOM
    WIRE
    NOT SPECIFIED
    NOT SPECIFIED
    -
    MIL-19500/581
    O-MBCY-W3
    Qualified
    1
    SINGLE
    NPN
    NPN
    -
    -
    30 @ 250mA 1V
    100nA ICBO
    600mV @ 100mA, 1A
    1A
    -
    -
    -
    Non-RoHS Compliant
    NO
    Other Transistors
    1W
    40V
    1MHz
    0.8W
    -
    -
    -
    -
    -
    -
    JAN2N918 vs JAN2N4237
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    1A
    140V
    -
    -
    Non-RoHS Compliant
    -
    -
    500mW
    80V
    -
    -
    3
    TO-46-3
    200°C
    -65°C
    80V
    No
    JAN2N918 vs JAN2N3057A
  • JAN2N2222AUA
    JAN2N2222AUA
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    23 Weeks
    Surface Mount
    Surface Mount
    4-SMD
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    1V
    800mA
    100 @ 150mA 10V
    50nA
    1V @ 50mA, 500mA
    800mA
    75V
    -
    -
    Non-RoHS Compliant
    -
    -
    500mW
    50V
    -
    -
    4
    -
    200°C
    -65°C
    50V
    No
    JAN2N918 vs JAN2N2222AUA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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