Microsemi Corporation JAN2N5684

Name: JAN2N5684
Brand: Microsemi Corporation
SKU: 2470550-JAN2N5684
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N5684

Manufacturer:: Microsemi Corporation

Ventron No:: 2470550-JAN2N5684

Description:: TRANS NPN 80V 50A TO-3

ECAD Model:

Datasheet:: JAN2N5684

Specifications

Microsemi Corporation JAN2N5684 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N5684.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/466
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL-19500/466B
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
300W
Polarity/Channel Type
PNP
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5A 2V
Current - Collector Cutoff (Max)
5μA
Vce Saturation (Max) @ Ib, Ic
5V @ 10A, 50A
Transition Frequency
2MHz
Collector Base Voltage (VCBO)
80V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N5684 Overview
In this device, the DC current gain is 30 @ 5A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 10A, 50A.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.

JAN2N5684 Features
the DC current gain for this device is 30 @ 5A 2V
the vce saturation(Max) is 5V @ 10A, 50A
a transition frequency of 2MHz

JAN2N5684 Applications
There are a lot of Microsemi Corporation
JAN2N5684 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N5684 More Descriptions

Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 50 A 300 W
Trans GP BJT NPN 80V 50A 3-Pin(2 Tab) TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip JAN2N5684

Product Comparison

The three parts on the right have similar specifications to JAN2N5684.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Reference Standard

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Power - Max

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Transition Frequency

Collector Base Voltage (VCBO)

Radiation Hardening

RoHS Status

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

HTS Code

Subcategory

Transistor Application

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Turn On Time-Max (ton)

View Compare
JAN2N5684

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

22 Weeks

Through Hole

Through Hole

TO-204AA, TO-3

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/466

2007

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

300W

BOTTOM

PIN/PEG

2

MIL-19500/466B

O-MBFM-P2

Qualified

1

SINGLE

COLLECTOR

300W

PNP

NPN

80V

50A

30 @ 5A 2V

5μA

5V @ 10A, 50A

2MHz

80V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N2221AUB

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

Surface Mount

Surface Mount

3-SMD, No Lead

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

-

-

-

Active

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

500mW

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

-

75V

No

Non-RoHS Compliant

UB

200°C

-65°C

50V

800mA

-

-

-

-

-

-

JAN2N5684 vs JAN2N2221AUB
JAN2N2907AL

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

18 Weeks

Surface Mount, Through Hole

Surface Mount

4-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/291

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

500mW

BOTTOM

WIRE

3

MIL-19500/291

-

Qualified

1

SINGLE

COLLECTOR

500mW

PNP

PNP

1.6V

600mA

100 @ 150mA 10V

50nA

1.6V @ 50mA, 500mA

-

60V

No

Non-RoHS Compliant

-

-

-

-

-

8541.21.00.95

Other Transistors

SWITCHING

TO-206AA

60V

45ns

JAN2N5684 vs JAN2N2907AL
JAN2N3057A

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

23 Weeks

Through Hole

Through Hole

TO-206AB, TO-46-3 Metal Can

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/391

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

500mW

-

NPN

500mV

1A

50 @ 500mA 10V

10nA

500mV @ 50mA, 500mA

-

140V

No

Non-RoHS Compliant

TO-46-3

200°C

-65°C

80V

1A

-

-

-

-

80V

-

JAN2N5684 vs JAN2N3057A