Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N5667
JAN2N5667

Microsemi Corporation JAN2N5667

Part Number:
JAN2N5667
Manufacturer:
Microsemi Corporation
Ventron No:
2466460-JAN2N5667
Description:
TRANS NPN 300V 5A TO-5
ECAD Model:
Datasheet:
2N5664-65,66(S,U3),67(S)

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation JAN2N5667 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N5667.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    22 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/455
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    1.2W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1.2W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 1A 5V
  • Current - Collector Cutoff (Max)
    200nA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 1A, 5A
  • Collector Base Voltage (VCBO)
    400V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N5667 Overview
This device has a DC current gain of 25 @ 1A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 5A volts.

JAN2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V


JAN2N5667 Applications
There are a lot of Microsemi Corporation
JAN2N5667 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N5667 More Descriptions
Non-Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago) 1.2 W
Trans GP BJT NPN 300V 5A 3-Pin TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JAN2N5667
Product Comparison
The three parts on the right have similar specifications to JAN2N5667.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Subcategory
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    HTS Code
    Power - Max
    Transition Frequency
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • JAN2N5667
    JAN2N5667
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    22 Weeks
    Through Hole
    Through Hole
    TO-205AA, TO-5-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/455
    2007
    e0
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    1.2W
    BOTTOM
    PIN/PEG
    2
    O-MBFM-P2
    Qualified
    1
    SINGLE
    1.2W
    COLLECTOR
    SWITCHING
    NPN
    NPN
    300V
    5A
    25 @ 1A 5V
    200nA
    1V @ 1A, 5A
    400V
    6V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N3506A
    JAN2N3506A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    22 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/349
    2007
    e0
    -
    Active
    1 (Unlimited)
    3
    EAR99
    TIN LEAD
    1W
    BOTTOM
    WIRE
    3
    -
    Qualified
    1
    SINGLE
    1W
    COLLECTOR
    SWITCHING
    NPN
    NPN
    40V
    3A
    40 @ 1.5A 2V
    -
    1.5V @ 250mA, 2.5A
    60V
    5V
    No
    Non-RoHS Compliant
    Other Transistors
    90ns
    45ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    JAN2N5667 vs JAN2N3506A
  • JAN2N3500
    JAN2N3500
    Microsemi Corporation
    -
    23 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/366
    2007
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    1W
    BOTTOM
    WIRE
    2
    -
    Qualified
    1
    SINGLE
    -
    COLLECTOR
    SWITCHING
    NPN
    NPN
    150V
    300mA
    40 @ 150mA 10V
    10μA ICBO
    400mV @ 15mA, 150mA
    150V
    -
    No
    Non-RoHS Compliant
    Other Transistors
    1150ns
    115ns
    8541.29.00.95
    1W
    150MHz
    -
    -
    -
    -
    -
    -
    JAN2N5667 vs JAN2N3500
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    140V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    500mW
    -
    TO-46-3
    200°C
    -65°C
    80V
    80V
    1A
    JAN2N5667 vs JAN2N3057A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for JAN2N5667
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.