Microsemi Corporation JAN2N5663

Name: JAN2N5663
Brand: Microsemi Corporation
SKU: 2470552-JAN2N5663
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N5663

Manufacturer:: Microsemi Corporation

Ventron No:: 2470552-JAN2N5663

Description:: TRANS NPN 300V 2A TO-5

ECAD Model:

Datasheet:: JAN2N5663

Specifications

Microsemi Corporation JAN2N5663 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N5663.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/454
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 500mA 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
800mV @ 400mA, 2A
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
6V
Turn On Time-Max (ton)
250ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N5663 Overview
In this device, the DC current gain is 25 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 400mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

JAN2N5663 Features
the DC current gain for this device is 25 @ 500mA 5V
the vce saturation(Max) is 800mV @ 400mA, 2A
the emitter base voltage is kept at 6V

JAN2N5663 Applications
There are a lot of Microsemi Corporation
JAN2N5663 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N5663 More Descriptions

Non-Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago) 1 W
Trans GP BJT NPN 300V 2A 3-Pin TO-5 Bag
TRANS NPN 300V 2A TO5
Power BJT _ TO-5

Product Comparison

The three parts on the right have similar specifications to JAN2N5663.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Turn On Time-Max (ton)

Radiation Hardening

RoHS Status

HTS Code

Subcategory

Reference Standard

Power - Max

Transistor Application

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Power Dissipation-Max (Abs)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

View Compare
JAN2N5663

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

22 Weeks

Through Hole

Through Hole

TO-205AA, TO-5-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/454

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

1W

BOTTOM

WIRE

3

Qualified

1

SINGLE

1W

COLLECTOR

NPN

NPN

300V

2A

25 @ 500mA 5V

200nA

800mV @ 400mA, 2A

400V

6V

250ns

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N2907AL

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

18 Weeks

Surface Mount, Through Hole

Surface Mount

4-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/291

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

500mW

BOTTOM

WIRE

3

Qualified

1

SINGLE

-

COLLECTOR

PNP

PNP

1.6V

600mA

100 @ 150mA 10V

50nA

1.6V @ 50mA, 500mA

60V

-

45ns

No

Non-RoHS Compliant

8541.21.00.95

Other Transistors

MIL-19500/291

500mW

SWITCHING

TO-206AA

60V

-

-

-

-

-

-

-

-

-

-

-

JAN2N5663 vs JAN2N2907AL
JAN2N4237

Microsemi Corporation

-

22 Weeks

-

Through Hole

TO-205AD, TO-39-3 Metal Can

-

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/581

2002

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

BOTTOM

WIRE

-

Qualified

1

SINGLE

-

-

NPN

NPN

-

-

30 @ 250mA 1V

100nA ICBO

600mV @ 100mA, 1A

-

-

-

-

Non-RoHS Compliant

8541.29.00.95

Other Transistors

MIL-19500/581

1W

-

-

-

NO

NOT SPECIFIED

NOT SPECIFIED

O-MBCY-W3

40V

1A

1MHz

0.8W

-

-

-

JAN2N5663 vs JAN2N4237
JAN2N2221A

Microsemi Corporation

-

18 Weeks

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Active

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

75V

-

-

No

Non-RoHS Compliant

-

-

-

500mW

-

-

-

-

-

-

-

50V

800mA

-

-

TO-18 (TO-206AA)

200°C

-65°C

JAN2N5663 vs JAN2N2221A