Microsemi Corporation JAN2N5157

Name: JAN2N5157
Brand: Microsemi Corporation
SKU: 2466513-JAN2N5157
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N5157

Manufacturer:: Microsemi Corporation

Ventron No:: 2466513-JAN2N5157

Description:: TRANS NPN 500V 3.5A TO3

ECAD Model:

Datasheet:: JAN2N5157

Specifications

Microsemi Corporation JAN2N5157 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N5157.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/371
Published
2001
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 700mA, 3.5A
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N5157 Overview
In this device, the DC current gain is 30 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 700mA, 3.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3.5A volts at Single BJT transistors maximum.

JAN2N5157 Features
the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 2.5V @ 700mA, 3.5A
the emitter base voltage is kept at 6V

JAN2N5157 Applications
There are a lot of Microsemi Corporation
JAN2N5157 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N5157 More Descriptions

Trans GP BJT NPN 500V 3.5A 3-Pin(2 Tab) TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip JAN2N5157
TRANS NPN 500V 3.5A TO204AA
Power BJT _ TO-3

Product Comparison

The three parts on the right have similar specifications to JAN2N5157.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Radiation Hardening

RoHS Status

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

ECCN Code

Subcategory

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Collector Emitter Breakdown Voltage

View Compare
JAN2N5157

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

22 Weeks

Through Hole

Through Hole

TO-204AA, TO-3

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/371

2001

e0

no

Active

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

5W

BOTTOM

PIN/PEG

2

O-MBFM-P2

Qualified

1

SINGLE

5W

COLLECTOR

SWITCHING

NPN

NPN

500V

3.5A

30 @ 1A 5V

250μA

2.5V @ 700mA, 3.5A

700V

6V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N2221AUB

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

Surface Mount

Surface Mount

3-SMD, No Lead

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

-

-

-

Active

1 (Unlimited)

-

-

500mW

-

-

-

-

-

-

-

-

-

-

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

75V

-

No

Non-RoHS Compliant

UB

200°C

-65°C

500mW

50V

800mA

-

-

-

-

-

JAN2N5157 vs JAN2N2221AUB
JAN2N3506A

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

22 Weeks

Through Hole

Through Hole

TO-205AD, TO-39-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/349

2007

e0

-

Active

1 (Unlimited)

3

TIN LEAD

1W

BOTTOM

WIRE

3

-

Qualified

1

SINGLE

1W

COLLECTOR

SWITCHING

NPN

NPN

40V

3A

40 @ 1.5A 2V

-

1.5V @ 250mA, 2.5A

60V

5V

No

Non-RoHS Compliant

-

-

-

-

-

-

EAR99

Other Transistors

90ns

45ns

-

JAN2N5157 vs JAN2N3506A
JAN2N2222AUA

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

Surface Mount

Surface Mount

4-SMD

4

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Discontinued

1 (Unlimited)

-

-

500mW

-

-

-

-

-

-

-

-

-

-

-

NPN

1V

800mA

100 @ 150mA 10V

50nA

1V @ 50mA, 500mA

75V

-

No

Non-RoHS Compliant

-

200°C

-65°C

500mW

50V

800mA

-

-

-

-

50V

JAN2N5157 vs JAN2N2222AUA