Microsemi Corporation JAN2N3700
- Part Number:
- JAN2N3700
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3585569-JAN2N3700
- Description:
- TRANS NPN 80V 1A
- ECAD Model:
-
- Datasheet:
- JAN2N3700
Microsemi Corporation JAN2N3700 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3700.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/391
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JAN2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JAN2N3700 Applications
There are a lot of Microsemi Corporation
JAN2N3700 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JAN2N3700 Applications
There are a lot of Microsemi Corporation
JAN2N3700 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3700 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
Military MIL-PRF-19500/391 Bulk Through Hole NPN Bipolar (BJT) Transistor 50 @ 500mA 10V 10nA 500mW 100MHz
JAN Series 80 V 1 A 500 mW Through Hole Low Power NPN Silicon Transistor - TO-18
Military MIL-PRF-19500/391 Bulk Through Hole NPN Bipolar (BJT) Transistor 50 @ 500mA 10V 10nA 500mW 100MHz
JAN Series 80 V 1 A 500 mW Through Hole Low Power NPN Silicon Transistor - TO-18
The three parts on the right have similar specifications to JAN2N3700.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPin CountQualification StatusNumber of ElementsConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreeHTS CodeSubcategoryReference StandardPower - MaxJEDEC-95 CodeTurn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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JAN2N3700IN PRODUCTION (Last Updated: 3 weeks ago)8 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)500mWBOTTOMWIRE3Qualified1SINGLE500mWCOLLECTORSWITCHINGNPNNPN80V1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA80V100MHz140V7VNoNon-RoHS CompliantContains Lead------------ -
IN PRODUCTION (Last Updated: 1 month ago)18 WeeksSurface Mount, Through HoleSurface Mount4-SMD, No Lead3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)500mWBOTTOMWIRE3Qualified1SINGLE-COLLECTORSWITCHINGPNPPNP1.6V600mA100 @ 150mA 10V50nA1.6V @ 50mA, 500mA60V-60V-NoNon-RoHS Compliant-8541.21.00.95Other TransistorsMIL-19500/291500mWTO-206AA45ns-----
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IN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007--Discontinued1 (Unlimited)---500mW----------NPN500mV1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA80V-140V-NoNon-RoHS Compliant----500mW--TO-46-3200°C-65°C80V1A
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-18 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007--Active1 (Unlimited)---500mW----------NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA--75V-NoNon-RoHS Compliant----500mW--TO-18 (TO-206AA)200°C-65°C50V800mA
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