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JAN2N3501

Microsemi Corporation JAN2N3501

Part Number:
JAN2N3501
Manufacturer:
Microsemi Corporation
Ventron No:
2463777-JAN2N3501
Description:
TRANS NPN 150V 0.3A
ECAD Model:
Datasheet:
JAN2N3501

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Specifications
Microsemi Corporation JAN2N3501 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3501.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/366
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    150V
  • Max Collector Current
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 15mA, 150mA
  • Collector Emitter Breakdown Voltage
    150V
  • Collector Base Voltage (VCBO)
    150V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N3501 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.

JAN2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V


JAN2N3501 Applications
There are a lot of Microsemi Corporation
JAN2N3501 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N3501 More Descriptions
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag
Non-Compliant Through Hole NPN Bulk TO-39-3 3 Production (Last Updated: 1 month ago)
300mA, 150V, NPN, Si, SMALL SIGNAL TRANSISTOR
Product Comparison
The three parts on the right have similar specifications to JAN2N3501.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    HTS Code
    Subcategory
    Power - Max
    Transition Frequency
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • JAN2N3501
    JAN2N3501
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/366
    2002
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    1W
    BOTTOM
    WIRE
    2
    Qualified
    1
    SINGLE
    1W
    COLLECTOR
    SWITCHING
    NPN
    NPN
    150V
    300mA
    100 @ 150mA 10V
    10μA ICBO
    400mV @ 15mA, 150mA
    150V
    150V
    6V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N3500
    JAN2N3500
    Microsemi Corporation
    -
    23 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/366
    2007
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    1W
    BOTTOM
    WIRE
    2
    Qualified
    1
    SINGLE
    -
    COLLECTOR
    SWITCHING
    NPN
    NPN
    150V
    300mA
    40 @ 150mA 10V
    10μA ICBO
    400mV @ 15mA, 150mA
    -
    150V
    -
    No
    Non-RoHS Compliant
    8541.29.00.95
    Other Transistors
    1W
    150MHz
    1150ns
    115ns
    -
    -
    -
    -
    -
    JAN2N3501 vs JAN2N3500
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    80V
    140V
    -
    No
    Non-RoHS Compliant
    -
    -
    500mW
    -
    -
    -
    TO-46-3
    200°C
    -65°C
    80V
    1A
    JAN2N3501 vs JAN2N3057A
  • JAN2N2221A
    JAN2N2221A
    Microsemi Corporation
    -
    18 Weeks
    Through Hole
    Through Hole
    TO-206AA, TO-18-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    2007
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    50V
    800mA
    40 @ 150mA 10V
    50nA
    1V @ 50mA, 500mA
    -
    75V
    -
    No
    Non-RoHS Compliant
    -
    -
    500mW
    -
    -
    -
    TO-18 (TO-206AA)
    200°C
    -65°C
    50V
    800mA
    JAN2N3501 vs JAN2N2221A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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