Microsemi Corporation JAN2N3439
- Part Number:
- JAN2N3439
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465556-JAN2N3439
- Description:
- TRANS NPN 350V 1A
- ECAD Model:
-
- Datasheet:
- JAN2N3439
Microsemi Corporation JAN2N3439 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3439.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/368
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Frequency40MHz
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA 10V
- Current - Collector Cutoff (Max)2μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency15MHz
- Collector Base Voltage (VCBO)450V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3439 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 20mA 10V.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 15MHz.A maximum collector current of 1A volts can be achieved.
JAN2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JAN2N3439 Applications
There are a lot of Microsemi Corporation
JAN2N3439 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 20mA 10V.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 15MHz.A maximum collector current of 1A volts can be achieved.
JAN2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JAN2N3439 Applications
There are a lot of Microsemi Corporation
JAN2N3439 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3439 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag
2N32XX Series NPN 350 V 1 A Through Hole Low Power Silicon Transistor - TO-39
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag
2N32XX Series NPN 350 V 1 A Through Hole Low Power Silicon Transistor - TO-39
The three parts on the right have similar specifications to JAN2N3439.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormFrequencyQualification StatusNumber of ElementsConfigurationPower DissipationCase ConnectionPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Pin CountTransistor ApplicationTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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JAN2N3439IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3682007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors800mWBOTTOMWIRE40MHzQualified1SINGLE800mWCOLLECTORNPNNPN350V1A40 @ 20mA 10V2μA500mV @ 4mA, 50mA350V15MHz450V7VNoNon-RoHS Compliant----------- -
IN PRODUCTION (Last Updated: 3 weeks ago)23 WeeksSurface MountSurface Mount3-SMD, No Lead3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/255---Active1 (Unlimited)----500mW---------NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA--75V-NoNon-RoHS CompliantUB200°C-65°C500mW50V800mA----
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IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007e0-Active1 (Unlimited)3EAR99TIN LEADOther Transistors1WBOTTOMWIRE-Qualified1SINGLE1WCOLLECTORNPNNPN40V3A40 @ 1.5A 2V-1.5V @ 250mA, 2.5A--60V5VNoNon-RoHS Compliant------3SWITCHING90ns45ns
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-18 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007--Active1 (Unlimited)----500mW---------NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA--75V-NoNon-RoHS CompliantTO-18 (TO-206AA)200°C-65°C500mW50V800mA----
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