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JAN2N3250A

Microsemi Corporation JAN2N3250A

Part Number:
JAN2N3250A
Manufacturer:
Microsemi Corporation
Ventron No:
2470531-JAN2N3250A
Description:
TRANS PNP 60V 0.2A TO-39
ECAD Model:
Datasheet:
JAN2N3250A

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Specifications
Microsemi Corporation JAN2N3250A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3250A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/323
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    360mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    360mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 1V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Transition Frequency
    250MHz
  • Collector Base Voltage (VCBO)
    60V
  • Turn Off Time-Max (toff)
    250ns
  • Turn On Time-Max (ton)
    70ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N3250A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

JAN2N3250A Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 250MHz


JAN2N3250A Applications
There are a lot of Microsemi Corporation
JAN2N3250A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N3250A More Descriptions
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 200 mA 360 mW
Trans GP BJT PNP 60V 200mA 3-Pin TO-39 Bag
Small-Signal BJT _ TO-18
Product Comparison
The three parts on the right have similar specifications to JAN2N3250A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Transition Frequency
    Collector Base Voltage (VCBO)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Radiation Hardening
    RoHS Status
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Collector Emitter Breakdown Voltage
    View Compare
  • JAN2N3250A
    JAN2N3250A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/323
    2007
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    Other Transistors
    360mW
    BOTTOM
    WIRE
    3
    Qualified
    1
    SINGLE
    COLLECTOR
    360mW
    SWITCHING
    PNP
    PNP
    60V
    200mA
    50 @ 10mA 1V
    10μA ICBO
    500mV @ 5mA, 50mA
    250MHz
    60V
    250ns
    70ns
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N4237
    JAN2N4237
    Microsemi Corporation
    -
    22 Weeks
    -
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    -
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/581
    2002
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    Other Transistors
    -
    BOTTOM
    WIRE
    -
    Qualified
    1
    SINGLE
    -
    1W
    -
    NPN
    NPN
    -
    -
    30 @ 250mA 1V
    100nA ICBO
    600mV @ 100mA, 1A
    1MHz
    -
    -
    -
    -
    Non-RoHS Compliant
    NO
    NOT SPECIFIED
    NOT SPECIFIED
    MIL-19500/581
    O-MBCY-W3
    40V
    1A
    0.8W
    -
    -
    -
    -
    JAN2N3250A vs JAN2N4237
  • JAN2N3500
    JAN2N3500
    Microsemi Corporation
    -
    23 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/366
    2007
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    Other Transistors
    1W
    BOTTOM
    WIRE
    2
    Qualified
    1
    SINGLE
    COLLECTOR
    1W
    SWITCHING
    NPN
    NPN
    150V
    300mA
    40 @ 150mA 10V
    10μA ICBO
    400mV @ 15mA, 150mA
    150MHz
    150V
    1150ns
    115ns
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    JAN2N3250A vs JAN2N3500
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    500mW
    -
    -
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    -
    140V
    -
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    80V
    1A
    -
    TO-46-3
    200°C
    -65°C
    80V
    JAN2N3250A vs JAN2N3057A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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