Microsemi Corporation JAN2N3019S
- Part Number:
- JAN2N3019S
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466453-JAN2N3019S
- Description:
- TRANS NPN 80V 1A
- ECAD Model:
-
- Datasheet:
- JAN2N3019S
Microsemi Corporation JAN2N3019S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3019S.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/391
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3019S Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Maximum collector currents can be below 1A volts.
JAN2N3019S Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JAN2N3019S Applications
There are a lot of Microsemi Corporation
JAN2N3019S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Maximum collector currents can be below 1A volts.
JAN2N3019S Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JAN2N3019S Applications
There are a lot of Microsemi Corporation
JAN2N3019S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3019S More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
Military MIL-PRF-19500/391 Bulk Through Hole NPN Bipolar (BJT) Transistor 50 @ 500mA 10V 10nA 800mW 140V
Compliant Through Hole NPN Bulk TO-39 3 Production (Last Updated: 1 month ago)
Military MIL-PRF-19500/391 Bulk Through Hole NPN Bipolar (BJT) Transistor 50 @ 500mA 10V 10nA 800mW 140V
Compliant Through Hole NPN Bulk TO-39 3 Production (Last Updated: 1 month ago)
The three parts on the right have similar specifications to JAN2N3019S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPin CountQualification StatusNumber of ElementsConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusSubcategoryTurn Off Time-Max (toff)Turn On Time-Max (ton)Max Operating TemperatureMin Operating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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JAN2N3019SIN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)800mWBOTTOMWIRE2Qualified1SINGLE800mWCOLLECTORSWITCHINGNPNNPN80V1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA80V140V7VNoNon-RoHS Compliant--------- -
IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AA, TO-5-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007e0-Active1 (Unlimited)3EAR99TIN LEAD1WBOTTOMWIRE3Qualified1SINGLE1WCOLLECTORSWITCHINGNPNNPN50V3A30 @ 1.5A 2V-1.5V @ 250mA, 2.5A-80V5VNoNon-RoHS CompliantOther Transistors90ns45ns-----
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IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007e0-Active1 (Unlimited)3EAR99TIN LEAD1WBOTTOMWIRE3Qualified1SINGLE1WCOLLECTORSWITCHINGNPNNPN40V3A40 @ 1.5A 2V-1.5V @ 250mA, 2.5A-60V5VNoNon-RoHS CompliantOther Transistors90ns45ns-----
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IN PRODUCTION (Last Updated: 3 weeks ago)23 WeeksSurface MountSurface Mount4-SMD4--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007--Discontinued1 (Unlimited)---500mW----------NPN1V800mA100 @ 150mA 10V50nA1V @ 50mA, 500mA50V75V-NoNon-RoHS Compliant---200°C-65°C500mW50V800mA
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