Microsemi Corporation JAN2N2906AUA
- Part Number:
- JAN2N2906AUA
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466325-JAN2N2906AUA
- Description:
- TRANS PNP 60V 0.6A
- ECAD Model:
-
Microsemi Corporation JAN2N2906AUA technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2906AUA.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-SMD, No Lead
- Number of Pins4
- Supplier Device Package4-SMD
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/291
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation400mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2906AUA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.This product comes in a 4-SMD device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
JAN2N2906AUA Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of 4-SMD
JAN2N2906AUA Applications
There are a lot of Microsemi Corporation
JAN2N2906AUA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.This product comes in a 4-SMD device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
JAN2N2906AUA Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of 4-SMD
JAN2N2906AUA Applications
There are a lot of Microsemi Corporation
JAN2N2906AUA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2906AUA More Descriptions
Trans GP BJT PNP 60V 600mA 4-Pin SMD Waffle Pack
Non-Compliant Surface Mount 4 Production (Last Updated: 2 months ago) No 600 mA 400 mW 200 °C
Trans GP BJT PNP 60V 0.6A 4-Pin UA
Non-Compliant Surface Mount 4 Production (Last Updated: 2 months ago) No 600 mA 400 mW 200 °C
Trans GP BJT PNP 60V 0.6A 4-Pin UA
The three parts on the right have similar specifications to JAN2N2906AUA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Radiation HardeningRoHS StatusCollector Emitter Breakdown VoltageView Compare
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JAN2N2906AUAIN PRODUCTION (Last Updated: 3 weeks ago)23 WeeksSurface MountSurface Mount4-SMD, No Lead44-SMD-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007Active1 (Unlimited)200°C-65°C400mW500mWPNP60V600mA40 @ 150mA 10V50nA1.6V @ 50mA, 500mA60V600mA60VNoNon-RoHS Compliant-- -
IN PRODUCTION (Last Updated: 3 weeks ago)23 WeeksSurface MountSurface Mount3-SMD, No Lead3UB-65°C~200°C TJBulkMilitary, MIL-PRF-19500/255-Active1 (Unlimited)200°C-65°C500mW500mWNPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA50V800mA75VNoNon-RoHS Compliant-
-
IN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3TO-46-3-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007Discontinued1 (Unlimited)200°C-65°C500mW500mWNPN500mV1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA80V1A140VNoNon-RoHS Compliant80V
-
-18 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3TO-18 (TO-206AA)-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007Active1 (Unlimited)200°C-65°C500mW500mWNPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA50V800mA75VNoNon-RoHS Compliant-
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