Microsemi Corporation JAN2N2905AL
- Part Number:
- JAN2N2905AL
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069097-JAN2N2905AL
- Description:
- TRANS PNP 60V 0.6A TO5
- ECAD Model:
-
- Datasheet:
- JAN2N2905AL
Microsemi Corporation JAN2N2905AL technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2905AL.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/290
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Reference StandardMIL-19500/290K
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2905AL Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 600mA volts.
JAN2N2905AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JAN2N2905AL Applications
There are a lot of Microsemi Corporation
JAN2N2905AL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 600mA volts.
JAN2N2905AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JAN2N2905AL Applications
There are a lot of Microsemi Corporation
JAN2N2905AL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2905AL More Descriptions
Non-Compliant Through Hole Bulk TO-5-3 3 Production (Last Updated: 1 month ago) No 600 mA
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-5 Tray
Small-Signal BJT _ TO-5
TRANS PNP 60V 0.6A TO5
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-5 Tray
Small-Signal BJT _ TO-5
TRANS PNP 60V 0.6A TO5
The three parts on the right have similar specifications to JAN2N2905AL.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeMax Power DissipationTerminal PositionTerminal FormPin CountReference StandardQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Turn On Time-Max (ton)Radiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)PublishedSubcategoryPower DissipationEmitter Base Voltage (VEBO)Turn Off Time-Max (toff)View Compare
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JAN2N2905ALIN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-205AA, TO-5-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/290e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95800mWBOTTOMWIRE3MIL-19500/290KQualified1SINGLECOLLECTOR800mWSWITCHINGPNPPNP1.6V600mA100 @ 150mA 10V1μA1.6V @ 50mA, 500mA60V60V45nsNoNon-RoHS Compliant----------- -
IN PRODUCTION (Last Updated: 3 weeks ago)23 WeeksSurface MountSurface Mount3-SMD, No Lead3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/255--Active1 (Unlimited)----500mW--------500mW--NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA-75V-NoNon-RoHS CompliantUB200°C-65°C50V800mA-----
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IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/349e0-Active1 (Unlimited)3EAR99TIN LEAD-1WBOTTOMWIRE3-Qualified1SINGLECOLLECTOR-SWITCHINGNPNNPN40V3A40 @ 1.5A 2V-1.5V @ 250mA, 2.5A-60V45nsNoNon-RoHS Compliant-----2007Other Transistors1W5V90ns
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IN PRODUCTION (Last Updated: 3 weeks ago)23 WeeksSurface MountSurface Mount4-SMD4--65°C~200°C TJBulkMilitary, MIL-PRF-19500/255--Discontinued1 (Unlimited)----500mW--------500mW--NPN1V800mA100 @ 150mA 10V50nA1V @ 50mA, 500mA50V75V-NoNon-RoHS Compliant-200°C-65°C50V800mA2007----
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