Microsemi Corporation JAN2N2880

Name: JAN2N2880
Brand: Microsemi Corporation
SKU: 2476371-JAN2N2880
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N2880

Manufacturer:: Microsemi Corporation

Ventron No:: 2476371-JAN2N2880

Description:: TRANS NPN 80V 5A TO59

ECAD Model:

Datasheet:: JAN2N2880

Specifications

Microsemi Corporation JAN2N2880 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2880.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
22 Weeks
Mount
Stud
Mounting Type
Stud Mount
Package / Case
TO-210AA, TO-59-4, Stud
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/315
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
2W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 2V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
8V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N2880 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 5A volts.

JAN2N2880 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 8V
a transition frequency of 30MHz

JAN2N2880 Applications
There are a lot of Microsemi Corporation
JAN2N2880 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N2880 More Descriptions

Trans GP BJT NPN 80V 5A 3-Pin TO-59
Power Bjt To-59 Rohs Compliant: Yes |Microchip JAN2N2880
TRANS NPN 80V 5A TO59
Power BJT _ TO-59

Product Comparison

The three parts on the right have similar specifications to JAN2N2880.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Radiation Hardening

RoHS Status

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

HTS Code

Subcategory

Reference Standard

Case Connection

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Turn On Time-Max (ton)

View Compare
JAN2N2880

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

22 Weeks

Stud

Stud Mount

TO-210AA, TO-59-4, Stud

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/315

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

2W

UPPER

UNSPECIFIED

3

Qualified

1

SINGLE

2W

SWITCHING

NPN

NPN

80V

5A

40 @ 1A 2V

20μA

1.5V @ 500mA, 5A

30MHz

110V

8V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N2221AUB

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

Surface Mount

Surface Mount

3-SMD, No Lead

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

-

-

-

Active

1 (Unlimited)

-

-

-

-

500mW

-

-

-

-

-

-

-

-

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

-

75V

-

No

Non-RoHS Compliant

UB

200°C

-65°C

500mW

50V

800mA

-

-

-

-

-

-

-

JAN2N2880 vs JAN2N2221AUB
JAN2N2907AL

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

18 Weeks

Surface Mount, Through Hole

Surface Mount

4-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/291

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

500mW

BOTTOM

WIRE

3

Qualified

1

SINGLE

-

SWITCHING

PNP

PNP

1.6V

600mA

100 @ 150mA 10V

50nA

1.6V @ 50mA, 500mA

-

60V

-

No

Non-RoHS Compliant

-

-

-

500mW

-

-

8541.21.00.95

Other Transistors

MIL-19500/291

COLLECTOR

TO-206AA

60V

45ns

JAN2N2880 vs JAN2N2907AL
JAN2N2221A

Microsemi Corporation

-

18 Weeks

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Active

1 (Unlimited)

-

-

-

-

500mW

-

-

-

-

-

-

-

-

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

-

75V

-

No

Non-RoHS Compliant

TO-18 (TO-206AA)

200°C

-65°C

500mW

50V

800mA

-

-

-

-

-

-

-

JAN2N2880 vs JAN2N2221A