Microsemi Corporation JAN2N2605

Name: JAN2N2605
Brand: Microsemi Corporation
SKU: 3069174-JAN2N2605
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N2605

Manufacturer:: Microsemi Corporation

Ventron No:: 3069174-JAN2N2605

Description:: TRANS PNP 60V 0.03A TO46

ECAD Model:

Datasheet:: JAN2N2605

Specifications

Microsemi Corporation JAN2N2605 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2605.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
23 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/354
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
400mW
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N2605 Overview
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 30mA volts.

JAN2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V

JAN2N2605 Applications
There are a lot of Microsemi Corporation
JAN2N2605 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N2605 More Descriptions

Non-Compliant Through Hole PNP Bulk TO-46-3 3 Production (Last Updated: 1 month ago) 400 mW
Trans GP BJT PNP 70V 30mA 3-Pin TO-46 Bag
Small-Signal BJT _ TO-46
TRANS PNP 60V 0.03A TO46-3

Product Comparison

The three parts on the right have similar specifications to JAN2N2605.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Radiation Hardening

RoHS Status

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

HTS Code

Subcategory

Reference Standard

JEDEC-95 Code

Turn On Time-Max (ton)

View Compare
JAN2N2605

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

23 Weeks

Through Hole

Through Hole

TO-206AB, TO-46-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/354

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

400mW

BOTTOM

WIRE

3

Qualified

1

SINGLE

400mW

COLLECTOR

AMPLIFIER

PNP

PNP

60V

30mA

100 @ 10mA 5V

10nA

300mV @ 500μA, 10mA

60V

70V

6V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N2221AUB

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

Surface Mount

Surface Mount

3-SMD, No Lead

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

-

-

-

Active

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

-

75V

-

No

Non-RoHS Compliant

UB

200°C

-65°C

500mW

50V

800mA

-

-

-

-

-

JAN2N2605 vs JAN2N2221AUB
JAN2N2907AL

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

18 Weeks

Surface Mount, Through Hole

Surface Mount

4-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/291

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

500mW

BOTTOM

WIRE

3

Qualified

1

SINGLE

-

COLLECTOR

SWITCHING

PNP

PNP

1.6V

600mA

100 @ 150mA 10V

50nA

1.6V @ 50mA, 500mA

60V

60V

-

No

Non-RoHS Compliant

-

-

-

500mW

-

-

8541.21.00.95

Other Transistors

MIL-19500/291

TO-206AA

45ns

JAN2N2605 vs JAN2N2907AL
JAN2N2222AUA

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

Surface Mount

Surface Mount

4-SMD

4

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

-

NPN

1V

800mA

100 @ 150mA 10V

50nA

1V @ 50mA, 500mA

50V

75V

-

No

Non-RoHS Compliant

-

200°C

-65°C

500mW

50V

800mA

-

-

-

-

-

JAN2N2605 vs JAN2N2222AUA