Microsemi Corporation JAN2N2484UB
- Part Number:
- JAN2N2484UB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466197-JAN2N2484UB
- Description:
- TRANS NPN 60V 0.05A
- Datasheet:
- JAN2N2484UB
Microsemi Corporation JAN2N2484UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2484UB.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/376
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Max Power Dissipation360mW
- Terminal PositionDUAL
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max360mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA 5V
- Current - Collector Cutoff (Max)2nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 100μA, 1mA
- Collector Emitter Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2484UB Overview
This device has a DC current gain of 225 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 50mA volts.
JAN2N2484UB Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
JAN2N2484UB Applications
There are a lot of Microsemi Corporation
JAN2N2484UB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 225 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 50mA volts.
JAN2N2484UB Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
JAN2N2484UB Applications
There are a lot of Microsemi Corporation
JAN2N2484UB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2484UB More Descriptions
Non-Compliant Surface Mount SMD/SMT 3 Production (Last Updated: 2 months ago) No 50 mA 360 mW
Trans GP BJT NPN 60V 50mA 3-Pin SMD Waffle Pack
Small-Signal BJT _ UB
Trans GP BJT NPN 60V 50mA 3-Pin SMD Waffle Pack
Small-Signal BJT _ UB
The three parts on the right have similar specifications to JAN2N2484UB.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTerminal PositionPin CountQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Radiation HardeningRoHS StatusTerminal FormPower DissipationCase ConnectionTransistor ApplicationEmitter Base Voltage (VEBO)Turn Off Time-Max (toff)Turn On Time-Max (ton)Reference StandardJEDEC-95 CodeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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JAN2N2484UBIN PRODUCTION (Last Updated: 1 month ago)23 WeeksSurface MountSurface Mount3-SMD, No Lead3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3762007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors360mWDUAL3Qualified1SINGLE360mWNPNNPN300mV50mA225 @ 10mA 5V2nA300mV @ 100μA, 1mA60V60VNoNon-RoHS Compliant---------------
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IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007e0-Active1 (Unlimited)3EAR99TIN LEAD-Other Transistors1WBOTTOM3Qualified1SINGLE-NPNNPN40V3A40 @ 1.5A 2V-1.5V @ 250mA, 2.5A-60VNoNon-RoHS CompliantWIRE1WCOLLECTORSWITCHING5V90ns45ns-------
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IN PRODUCTION (Last Updated: 1 month ago)18 WeeksSurface Mount, Through HoleSurface Mount4-SMD, No Lead3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors500mWBOTTOM3Qualified1SINGLE500mWPNPPNP1.6V600mA100 @ 150mA 10V50nA1.6V @ 50mA, 500mA60V60VNoNon-RoHS CompliantWIRE-COLLECTORSWITCHING--45nsMIL-19500/291TO-206AA-----
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IN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007--Discontinued1 (Unlimited)-----500mW-----500mW-NPN500mV1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA80V140VNoNon-RoHS Compliant---------TO-46-3200°C-65°C80V1A
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