Microsemi Corporation JAN2N2484
- Part Number:
- JAN2N2484
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466221-JAN2N2484
- Description:
- TRANS NPN 60V 0.05A TO18
- ECAD Model:
-
- Datasheet:
- JAN2N2484
Microsemi Corporation JAN2N2484 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2484.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/376
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation360mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation360mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA 5V
- Current - Collector Cutoff (Max)2nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 100μA, 1mA
- Collector Emitter Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2484 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 225 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100μA, 1mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 50mA volts.
JAN2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
JAN2N2484 Applications
There are a lot of Microsemi Corporation
JAN2N2484 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 225 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100μA, 1mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 50mA volts.
JAN2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
JAN2N2484 Applications
There are a lot of Microsemi Corporation
JAN2N2484 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to JAN2N2484.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPin CountQualification StatusNumber of ElementsConfigurationPower DissipationCase ConnectionPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusFactory Lead TimePublishedHTS CodeSubcategoryPower - MaxTransistor ApplicationTransition FrequencyTurn Off Time-Max (toff)Turn On Time-Max (ton)Lifecycle StatusMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageView Compare
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JAN2N2484Through HoleThrough HoleTO-206AA, TO-18-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/376e0noDiscontinued1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)360mWBOTTOMWIRE3Qualified1SINGLE360mWCOLLECTORNPNNPN60V50mA225 @ 10mA 5V2nA300mV @ 100μA, 1mA60V60V6VNoNon-RoHS Compliant---------------- -
Through HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/366e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)1WBOTTOMWIRE2Qualified1SINGLE-COLLECTORNPNNPN150V300mA40 @ 150mA 10V10μA ICBO400mV @ 15mA, 150mA-150V-NoNon-RoHS Compliant23 Weeks20078541.29.00.95Other Transistors1WSWITCHING150MHz1150ns115ns------
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Surface MountSurface Mount4-SMD4--65°C~200°C TJBulkMilitary, MIL-PRF-19500/255--Discontinued1 (Unlimited)---500mW---------NPN1V800mA100 @ 150mA 10V50nA1V @ 50mA, 500mA50V75V-NoNon-RoHS Compliant23 Weeks2007--500mW----IN PRODUCTION (Last Updated: 3 weeks ago)200°C-65°C50V800mA-
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Through HoleThrough HoleTO-206AA, TO-18-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/255--Active1 (Unlimited)---500mW---------NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA-75V-NoNon-RoHS Compliant18 Weeks2007--500mW-----200°C-65°C50V800mATO-18 (TO-206AA)
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