Microsemi Corporation JAN2N2432A

Name: JAN2N2432A
Brand: Microsemi Corporation
SKU: 3585580-JAN2N2432A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N2432A

Manufacturer:: Microsemi Corporation

Ventron No:: 3585580-JAN2N2432A

Description:: TRANS NPN 45V 0.1A

ECAD Model:

Datasheet:: JAN2N2432A

Specifications

Microsemi Corporation JAN2N2432A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2432A.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/313
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Power - Max
360mW
Transistor Application
CHOPPER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
18V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N2432A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 1mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 18V can result in a high level of efficiency.There is a transition frequency of 20MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.

JAN2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
the emitter base voltage is kept at 18V
a transition frequency of 20MHz

JAN2N2432A Applications
There are a lot of Microsemi Corporation
JAN2N2432A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N2432A More Descriptions

Trans GP BJT NPN 45V 0.1A 300mW 3-Pin TO-18 Bag
Non-Compliant Through Hole NPN Bulk TO-18 3 Production (Last Updated: 1 month ago) 300 mW
Small-Signal BJT _ TO-18

Product Comparison

The three parts on the right have similar specifications to JAN2N2432A.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Radiation Hardening

RoHS Status

Factory Lead Time

HTS Code

Subcategory

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
JAN2N2432A

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

SILICON

-65°C~175°C TJ

Bulk

Military, MIL-PRF-19500/313

2007

e0

no

Discontinued

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

300mW

BOTTOM

WIRE

3

Qualified

1

SINGLE

300mW

COLLECTOR

360mW

CHOPPER

NPN

NPN

45V

100mA

80 @ 1mA 5V

10nA

150mV @ 500μA, 10mA

20MHz

45V

18V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N3500

Microsemi Corporation

-

Through Hole

Through Hole

TO-205AD, TO-39-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/366

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

1W

BOTTOM

WIRE

2

Qualified

1

SINGLE

-

COLLECTOR

1W

SWITCHING

NPN

NPN

150V

300mA

40 @ 150mA 10V

10μA ICBO

400mV @ 15mA, 150mA

150MHz

150V

-

No

Non-RoHS Compliant

23 Weeks

8541.29.00.95

Other Transistors

1150ns

115ns

-

-

-

-

-

-

JAN2N2432A vs JAN2N3500
JAN2N3057A

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

Through Hole

Through Hole

TO-206AB, TO-46-3 Metal Can

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/391

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

500mW

-

-

NPN

500mV

1A

50 @ 500mA 10V

10nA

500mV @ 50mA, 500mA

-

140V

-

No

Non-RoHS Compliant

23 Weeks

-

-

-

-

TO-46-3

200°C

-65°C

80V

80V

1A

JAN2N2432A vs JAN2N3057A
JAN2N2222AUA

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

Surface Mount

Surface Mount

4-SMD

4

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

500mW

-

-

NPN

1V

800mA

100 @ 150mA 10V

50nA

1V @ 50mA, 500mA

-

75V

-

No

Non-RoHS Compliant

23 Weeks

-

-

-

-

-

200°C

-65°C

50V

50V

800mA

JAN2N2432A vs JAN2N2222AUA