Microsemi Corporation JAN2N2432

Name: JAN2N2432
Brand: Microsemi Corporation
SKU: 3585597-JAN2N2432
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N2432

Manufacturer:: Microsemi Corporation

Ventron No:: 3585597-JAN2N2432

Description:: TRANS NPN 30V 0.1A

ECAD Model:

Datasheet:: JAN2N2432

Specifications

Microsemi Corporation JAN2N2432 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2432.

Lifecycle Status
IN PRODUCTION (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/313
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Power - Max
360mW
Transistor Application
CHOPPER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
15V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JAN2N2432 Overview
DC current gain in this device equals 80 @ 1mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 500μA, 10mA.An emitter's base voltage can be kept at 15V to gain high efficiency.As a result, the part has a transition frequency of 20MHz.In extreme cases, the collector current can be as low as 100mA volts.

JAN2N2432 Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
the emitter base voltage is kept at 15V
a transition frequency of 20MHz

JAN2N2432 Applications
There are a lot of Microsemi Corporation
JAN2N2432 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N2432 More Descriptions

Trans GP BJT NPN 30V 0.1A 300mW 3-Pin TO-18 Bag
Silicon Low Power Transistor NPN 30V 100mA 3-Pin TO-206AA Through Hole
Non-Compliant Through Hole NPN Bulk TO-18 3 Production (Last Updated: 1 month ago)

Product Comparison

The three parts on the right have similar specifications to JAN2N2432.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Radiation Hardening

RoHS Status

Factory Lead Time

Subcategory

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Surface Mount

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Max Operating Temperature

Min Operating Temperature

Collector Emitter Breakdown Voltage

View Compare
JAN2N2432

Microsemi Corporation

IN PRODUCTION (Last Updated: 2 days ago)

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

SILICON

-65°C~175°C TJ

Bulk

Military, MIL-PRF-19500/313

2007

e0

no

Discontinued

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

300mW

BOTTOM

WIRE

3

Qualified

1

SINGLE

300mW

COLLECTOR

360mW

CHOPPER

NPN

NPN

30V

100mA

80 @ 1mA 5V

10nA

150mV @ 500μA, 10mA

20MHz

30V

15V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N3506A

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

Through Hole

Through Hole

TO-205AD, TO-39-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/349

2007

e0

-

Active

1 (Unlimited)

3

EAR99

TIN LEAD

1W

BOTTOM

WIRE

3

Qualified

1

SINGLE

1W

COLLECTOR

-

SWITCHING

NPN

NPN

40V

3A

40 @ 1.5A 2V

-

1.5V @ 250mA, 2.5A

-

60V

5V

No

Non-RoHS Compliant

22 Weeks

Other Transistors

90ns

45ns

-

-

-

-

-

-

-

-

-

-

-

-

JAN2N2432 vs JAN2N3506A
JAN2N4237

Microsemi Corporation

-

-

Through Hole

TO-205AD, TO-39-3 Metal Can

-

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/581

2002

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

BOTTOM

WIRE

-

Qualified

1

SINGLE

-

-

1W

-

NPN

NPN

-

-

30 @ 250mA 1V

100nA ICBO

600mV @ 100mA, 1A

1MHz

-

-

-

Non-RoHS Compliant

22 Weeks

Other Transistors

-

-

NO

8541.29.00.95

NOT SPECIFIED

NOT SPECIFIED

MIL-19500/581

O-MBCY-W3

40V

1A

0.8W

-

-

-

JAN2N2432 vs JAN2N4237
JAN2N2222AUA

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

Surface Mount

Surface Mount

4-SMD

4

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

500mW

-

-

NPN

1V

800mA

100 @ 150mA 10V

50nA

1V @ 50mA, 500mA

-

75V

-

No

Non-RoHS Compliant

23 Weeks

-

-

-

-

-

-

-

-

-

50V

800mA

-

200°C

-65°C

50V

JAN2N2432 vs JAN2N2222AUA