Microsemi Corporation JAN2N2219A
- Part Number:
- JAN2N2219A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2846282-JAN2N2219A
- Description:
- TRANS NPN 50V 0.8A
- ECAD Model:
-
- Datasheet:
- JAN2N2219A
Microsemi Corporation JAN2N2219A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2219A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/251
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-55°C
- Max Power Dissipation800mW
- Number of Elements1
- PolarityNPN
- Power Dissipation800mW
- Power - Max800mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2219A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 800mA volts at its maximum.
JAN2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39
JAN2N2219A Applications
There are a lot of Microsemi Corporation
JAN2N2219A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 800mA volts at its maximum.
JAN2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39
JAN2N2219A Applications
There are a lot of Microsemi Corporation
JAN2N2219A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2219A More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
JAN Series 50 V 800 mA Through Hole NPN Switching Silicon Transistor - TO-39-3
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
Small-Signal Bjt To-39 Rohs Compliant: Yes |Microchip JAN2N2219A
JAN Series 50 V 800 mA Through Hole NPN Switching Silicon Transistor - TO-39-3
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
Small-Signal Bjt To-39 Rohs Compliant: Yes |Microchip JAN2N2219A
The three parts on the right have similar specifications to JAN2N2219A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationNumber of ElementsPolarityPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPin CountQualification StatusConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTurn Off Time-Max (toff)Turn On Time-Max (ton)Pbfree CodeHTS CodeReference StandardJEDEC-95 CodeView Compare
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JAN2N2219AIN PRODUCTION (Last Updated: 1 month ago)8 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3TO-39-55°C~200°C TJBulkMilitary, MIL-PRF-19500/2512010Active1 (Unlimited)200°C-55°C800mW1NPN800mW800mWNPN50V800mA100 @ 150mA 10V10nA1V @ 50mA, 500mA50V50V800mA75V6VNoNon-RoHS Compliant--------------------- -
IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007Active1 (Unlimited)--1W1-1W-NPN40V3A40 @ 1.5A 2V-1.5V @ 250mA, 2.5A---60V5VNoNon-RoHS CompliantSILICONe03EAR99TIN LEADOther TransistorsBOTTOMWIRE3QualifiedSINGLECOLLECTORSWITCHINGNPN90ns45ns----
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IN PRODUCTION (Last Updated: 1 month ago)18 WeeksSurface Mount, Through HoleSurface Mount4-SMD, No Lead3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007Active1 (Unlimited)--500mW1--500mWPNP1.6V600mA100 @ 150mA 10V50nA1.6V @ 50mA, 500mA60V--60V-NoNon-RoHS CompliantSILICONe03EAR99Tin/Lead (Sn/Pb)Other TransistorsBOTTOMWIRE3QualifiedSINGLECOLLECTORSWITCHINGPNP-45nsno8541.21.00.95MIL-19500/291TO-206AA
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IN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3TO-46-3-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007Discontinued1 (Unlimited)200°C-65°C500mW---500mWNPN500mV1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA80V80V1A140V-NoNon-RoHS Compliant--------------------
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