Microsemi Corporation JAN2N2218AL
- Part Number:
- JAN2N2218AL
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069176-JAN2N2218AL
- Description:
- TRANS NPN 50V 0.8A TO5
- ECAD Model:
-
- Datasheet:
- JAN2N2218AL
Microsemi Corporation JAN2N2218AL technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2218AL.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/251
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Reference StandardMIL-19500/251L
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2218AL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218AL Applications
There are a lot of Microsemi Corporation
JAN2N2218AL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218AL Applications
There are a lot of Microsemi Corporation
JAN2N2218AL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2218AL More Descriptions
Trans GP BJT NPN 50V 0.8A 3-Pin TO-5
Small-Signal BJT _ TO-5
TRANS NPN 50V 0.8A TO5
Small-Signal BJT _ TO-5
TRANS NPN 50V 0.8A TO5
The three parts on the right have similar specifications to JAN2N2218AL.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountReference StandardQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Collector Base Voltage (VCBO)Radiation HardeningRoHS StatusPower - MaxJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On Time-Max (ton)Surface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeVoltage - Collector Emitter Breakdown (Max)Transition FrequencyPower Dissipation-Max (Abs)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureView Compare
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JAN2N2218ALIN PRODUCTION (Last Updated: 2 weeks ago)23 WeeksThrough HoleThrough HoleTO-205AA, TO-5-3 Metal Can3SILICON-55°C~200°C TJBulkMilitary, MIL-PRF-19500/2512007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors800mWBOTTOMWIRE3MIL-19500/251LQualified1SINGLECOLLECTORSWITCHINGNPNNPN50V800mA40 @ 150mA 10V10nA1V @ 50mA, 500mA800mA75VNoNon-RoHS Compliant--------------- -
IN PRODUCTION (Last Updated: 1 month ago)18 WeeksSurface Mount, Through HoleSurface Mount4-SMD, No Lead3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors500mWBOTTOMWIRE3MIL-19500/291Qualified1SINGLECOLLECTORSWITCHINGPNPPNP1.6V600mA100 @ 150mA 10V50nA1.6V @ 50mA, 500mA-60VNoNon-RoHS Compliant500mWTO-206AA60V45ns----------
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-22 Weeks-Through HoleTO-205AD, TO-39-3 Metal Can-SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/5812002e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.95Other Transistors-BOTTOMWIRE-MIL-19500/581Qualified1SINGLE--NPNNPN--30 @ 250mA 1V100nA ICBO600mV @ 100mA, 1A1A--Non-RoHS Compliant1W---NONOT SPECIFIEDNOT SPECIFIEDO-MBCY-W340V1MHz0.8W---
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-18 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007--Active1 (Unlimited)-----500mW----------NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA800mA75VNoNon-RoHS Compliant500mW-------50V--TO-18 (TO-206AA)200°C-65°C
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